Abstract:Monolayer transition metal dichalcogenides $MX_2$ ($M$ = Mo,W and $X$ = Te, Se, S) in 1T' structure were predicted to be quantum spin Hall insulators based on first-principles calculations, which were quickly confirmed by multiple experimental groups. For a better understanding of their properties, in particular their responses to external fields, we construct a realistic four-band tight-binding (TB) model by combining the symmetry analysis and first-principles calculations. Our TB model respects all the symmetries and can accurately reproduce the band structure in a large energy window from -0.3 eV to 0.8 eV. With the inclusion of spin-orbital coupling (SOC), our TB model can characterize the nontrivial topology and the corresponding edge states. Our TB model can also capture the anisotropic strain effects on the band structure and the strain-induced metal-insulator transition. Moreover, we found that although $MX_2$ share the same crystal structures and have the same crystal symmetries, while the orbital composition of states around the Fermi level are qualitatively different and their lower-energy properties cannot fully described by a single k $\cdot$ p model. Thus, we construct two different types of k $\cdot$ p model for $M$S$_2$,$M$Se$_2$ and $M$Te$_2$, respectively. Benefiting from the high accuracy and simplicity, our TB and k $\cdot$ p models can serve as a solid and concrete starting point for future studies of transport, superconductivity, strong correlation effects and twistronics in 1T'-transition metal dichalcogenides.

Temperature effects in topological insulators of transition metal dichalcogenide monolayers

Robust Coulomb Gap and Varied-temperature Study of Epitaxial 1T'-Wse_2 Monolayers

Robust Coulomb Gap and Varied-temperature Study of Epitaxial 1T'-WSe$_2$ Monolayers

Large Nernst Effect and Possible Temperature-Induced Lifshitz Transition in Topological Semimetal YbMnSb2

Floquet band engineering and topological phase transitions in 1T’ transition metal dichalcogenides

Effects of Pressure and Temperature on Topological Electronic Materials X2Y3 (X = As, Sb, Bi; Y = Se, Te) Using First-Principles.

Topological Phase Transition Between Distinct Weyl Semimetal States in MoTe2

Realistic tight-binding model for monolayer transition metal dichalcogenides in 1T' structure

Topological Phase Transition Due To Strain-Controlled Evolution Of The Inverted Bands In 1t '-Mx2

A monolayer transition metal dichalcogenide as a topological excitonic insulator

Pressure and thermal effects of topological electronic materials X2Y3 (X=As, Sb, Bi, Y=Se, Te) from first principles

Topological Insulators at Room Temperature

Topological Electronic Structure and Its Temperature Evolution in Antiferromagnetic Topological Insulator MnBi_{2}Te_{4}

Topologically Insulating States in Ternary Transition Metal Dichalcogenides

Topological superconductivity at the edge of transition metal dichalcogenides

First-principles investigation of possible room-temperature topological insulators in monolayers

Room Temperature Bound Excitons and Strain-Tunable Carrier Mobilities in Janus Monolayer Transition-Metal Dichalcogenides.

Quantum Spin Hall Effect and Topological Phase Transition in Two-Dimensional Square Transition Metal Dichalcogenides

C n -symmetric higher-order topological crystalline insulators in atomically thin transition metal dichalcogenides

Temperature-induced topological phase transitions: promoted vs. suppressed non-trivial topology

Single Dirac Cone Topological Surface State and Unusual Thermoelectric Property of Compounds from a New Topological Insulator Family