Abstract:A Quantum Spin Hall (QSH) insulator with a large bulk band gap and tunable topological properties is crucial for both fundamental research and practical application. Chemical function-alization has been proposed as an effective route to realize the QSH effect. Using the ABINIT package, we have investigated the properties of (1) TlP, the functionalized monolayers TlPX 2 (X = F, Cl, Br, I); (2) TlAs, the functionalized monolayers TlAsX 2 (X = F, Cl, Br, I), and (3) GaGeTe, InGeTe, and InSnTe systems. The topological nature is verified by the calculation of the Z 2 topo-logical invariant. We discovered TlPF 2 , TlPCl 2 , TlPBr 2 , TlPI 2 , TlAs, TlAsF 2 , TlAsCl 2 , TlAsBr 2 , and TlAsI 2 were promising 2D TIs with bulk band gaps as large as 0.21 eV. Each monolayer was suitable for room-temperature application, and show great potential for their future applications in quantum computers, nanoelectronics, and spintronics.
What problem does this paper attempt to address?
This paper mainly explores the problem of searching for two-dimensional topological insulators (2D TIs) that may work at room temperature through first-principles calculations. The authors studied single-layer TlP, TlAs, and halogen-functionalized TlPX2 and TlAsX2 (X = F, Cl, Br, I), as well as GaGeTe, InSnTe, and InGeTe systems. The topological properties of these materials were verified using Z2 topological invariants.
The study shows that TlPF2, TlPCl2, TlPBr2, TlPI2, TlAs, TlAsF2, TlAsCl2, TlAsBr2, and TlAsI2 are all 2D TIs with large bandgaps (up to 0.21 eV), suitable for applications at room temperature. By chemically functionalizing the electronic structures of these materials through adjusting the bandgap while maintaining nontrivial topological orders, their potential applications in quantum computing, nanoelectronics, and spintronics are demonstrated.
In contrast, although GaGeTe, InGeTe, and InSnTe exhibit some topological properties, they do not have the potential as 2D TIs. The paper also discusses in detail the crystal structures, bandgaps, and effects of spin-orbit coupling of these materials, and determines their topological states by calculating Z2 invariants through Wannier charge center trajectories.
In conclusion, the main goal of this paper is to discover a new generation of 2D topological insulators suitable for room temperature operation, providing new candidate materials for future quantum computing and spintronics devices.