Pressure and thermal effects of topological electronic materials X2Y3 (X=As, Sb, Bi, Y=Se, Te) from first principles

Le Fang,Chen Chen,Xionggang Lu,Wei Ren
DOI: https://doi.org/10.1039/d3cp01951a
IF: 3.3
2023-07-14
Physical Chemistry Chemical Physics
Abstract:We systematically study the thermal and topological properties of X Y (X=As, Sb, Bi; Y=Se, Te), and the effects of pressure and temperature on their electronic properties from first-principles. We find that the external pressure induced electronic topological transition occurs at about 5 GPa for Bi Se , and the type of band gap tends to become indirect with the increase of pressure. We also investigate the lattice expansion with temperature in quasi-harmonic approximation, and further explore the effect of temperature on the volume, band gap, and volumetric thermal expansion coefficient of studied selenides and tellurides. Finally, we calculate the evolution of Wannier charge center of X Y to determine their topological invariants, and theoretically suggest that Bi Se changes from topological to ordinary insulator when the pressure decreases to -8 GPa; As Se is found to be an ordinary insulator, while all other four compounds are always strong topological insulators at any pressure or temperature.
chemistry, physical,physics, atomic, molecular & chemical
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