Abstract:The ability to engineer atomically thin nanoscale lateral heterojunctions (HJs) is critical to lay the foundation for future two-dimensional (2D) device technology. However, the traditional approach to creating a heterojunction by direct growth of a heterostructure of two different materials constrains the available band offsets, and it is still unclear if large built-in potentials are attainable for 2D materials. The electronic properties of atomically thin semiconducting transition metal dichalcogenides (TMDs) are not static, and their exciton binding energy and quasiparticle band gap depend strongly on the proximal environment. Recent studies have shown that this effect can be harnessed to engineer the lateral band profile of monolayer TMDs to create a heterojunction. Here we demonstrate the synthesis of a nanoscale lateral heterojunction in monolayer MoSe2 by intercalating Se at the interface of a hBN/Ru(0001) substrate. The Se intercalation creates a spatially abrupt modulation of the local hBN/Ru work function, which is imprinted directly onto an overlying MoSe2 monolayer to create a large built-in potential of 0.83 eV. We spatially resolve the MoSe2 band profile and work function using scanning tunneling spectroscopy to map out the nanoscale depletion region. The Se intercalation also modifies the dielectric environment, influencing the local band gap renormalization and increasing the MoSe2 band gap by ~0.26 eV. This work illustrates that environmental proximity engineering provides a robust method to indirectly manipulate the band profile of 2D materials outside the limits of their intrinsic properties, providing avenues for future device design.

Nonreciprocal charge-density-wave proximity effect in a lateral heterojunction of NbSe2/TiSe2

Proximity Exchange Induced Gap Opening and Topological Feature in Graphene/1t'-Mx2 (M = Mo, W; X = S, Se, Te) Dirac Heterostructures

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Modulating Charge Density Wave Order in a 1T-Tas2/black Phosphorus Heterostructure.

Charge Transfer Effects in Naturally Occurring van der Waals Heterostructures (PbSe)_{1.16}(TiSe_{2})_{m} (m=1, 2).

Visualizing the Anomalous Charge Density Wave States in Graphene/NbSe2 Heterostructures

Visualizing the Anomalous Charge Density Wave States in Graphene/NbSe 2 Heterostructures

Visualizing Spatial Evolution of Electron-Correlated Interface in Two-Dimensional Heterostructures

Manipulating Topological Properties in Bi$_2$Se$_3$/BiSe/TMDC Heterostructures with Interface Charge Transfer

Two-Dimensional Electron Gas at the Metastable Twisted Interfaces of Cdte/Pbte (111) Single Heterojunctions

Unveiling Charge-Density Wave, Superconductivity, and Their Competitive Nature in Two-Dimensional NbSe2

Enhancing Charge-Density-Wave Order In 1t-Tise2 Nanosheet By Encapsulation With Hexagonal Boron Nitride

Probing charge order of monolayer NbSe$_2$ within a bulk crystal

Observation of an Incommensurate Charge Density Wave in Monolayer TiSe 2 / CuSe / Cu ( 1 1 1 ) Heterostructure

Van der Waals Schottky barriers as interface probes of the correlation between chemical potential shifts and charge density wave formation in 1T-TiSe$_2$ and 2H-NbSe$_2$

Superconducting proximity effect in a van der Waals 2H-TaS 2 /NbSe 2 heterostructure

Creating a Nanoscale Lateral Heterojunction in a Semiconductor Monolayer with a Large Built-in Potential

Charge Density Wave and Electron-Phonon Interaction in Epitaxial Monolayer NbSe2 Films

Theoretical Analysis of a Two-Dimensional Metallic/Semiconducting Transition-Metal Dichalcogenide NbS2//WSe2 Hybrid Interface

Proximity induced charge density wave in a graphene/1T-TaS2 heterostructure

Electron-phonon Coupling and the Coexistence of Superconductivity and Charge-Density Wave in Monolayer NbSe2