Abstract:We investigate electronic properties of heterojunctions between metallic and semiconducting single-wall carbon nanotubes. Ineffective screening of the long range Coulomb interaction in one-dimensional nanotube systems drastically modifies the charge transfer phenomena compared to conventional semiconductor heterostructures. The length of depletion region varies over a wide range (from the nanotube radius to the nanotube length) sensitively depending on the doping strength. The Schottky barrier gives rise to the asymmetry of the I-V characteristics of heterojunctions, in agreement with recent experimental results by Yao {\it et al.} and Fuhrer {\it et al.} Dynamic charge build-up near the junction results in a step-like growth of the current at reverse bias.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the Schottky barriers phenomenon in single - walled carbon nanotube (SWNTs) heterojunctions. Specifically, the author studied the electronic properties of heterojunctions between metallic and semiconducting single - walled carbon nanotubes and explained the nonlinear and asymmetric I - V characteristics observed in these heterojunctions. ### Main problems 1. **Why do Schottky barriers occur in carbon nanotube heterojunctions composed of the same material?** - Traditionally, it is believed that there should be no obvious charge transfer in heterojunctions composed of the same material, so the formation of Schottky barriers is surprising. 2. **How to explain the nonlinear and asymmetric I - V characteristics observed in the experiment?** - Studies by Yao et al. and Fuhrer et al. found that carbon nanotube heterojunctions exhibit nonlinear and asymmetric current - voltage characteristics similar to rectifying diodes. 3. **What is the influence of long - range Coulomb interaction on charge transfer in carbon nanotube heterojunctions?** - In one - dimensional carbon nanotube systems, the insufficient effective shielding of long - range Coulomb interaction leads to charge transfer phenomena that are significantly different from traditional semiconductor heterostructures. ### Research methods The author studied the charge transfer phenomenon in carbon nanotube heterojunctions by self - consistently solving the Poisson equation, with special attention to the equilibrium and non - equilibrium properties (such as Schottky barrier parameters and I - V characteristics) of metal - semiconductor SWNT heterojunctions. The model system includes a "straight" heterojunction, where the part with x < 0 is metallic and the part with x > 0 is semiconducting. ### Key formulas 1. **Fourier component of 1D Coulomb interaction**: \[ U(q)=\frac{2e^{2}}{\kappa}\left\{I_{0}(qR)K_{0}(qR)-\frac{I_{0}^{2}(qR)K_{0}(qR_{s})}{I_{0}(qR_{s})}\right\} \] where \(\kappa\) is the dielectric constant of the medium, and \(I_{0}, K_{0}\) are modified Bessel functions. 2. **Relationship between charge density and energy**: \[ \rho(x)=\int dE\,\text{sign}(E)\nu(E)f[(E - \tilde{E}_{0}(x))\text{sign}(E)] \] where \(\nu(E)\) is the density of electronic states and \(f(E)\) is the Fermi - Dirac distribution function. 3. **Relationship between charge neutrality level and electrostatic potential**: \[ \tilde{E}_{0}(x)+e\phi(x)=\mu + eV\text{sign}(x)/2 \] 4. **Calculation of current by Landauer formula**: \[ I=\frac{2e}{\pi\hbar}\int dE\,T(E)\left[f(E - eV/2)-f(E + eV/2)\right] \] where \(T(E)\) is the energy - dependent transmission coefficient. ### Conclusion Through a detailed analysis of long - range Coulomb interaction, the author explained the formation mechanism of Schottky barriers in carbon nanotube heterojunctions and their influence on current - voltage characteristics. The research shows that due to the existence of long - range Coulomb interaction, the charge transfer phenomenon in carbon nanotube heterojunctions is significantly different from that in traditional semiconductor heterostructures, which brings new challenges and opportunities for the design of new electronic devices.

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