Electric Field-Dependent Charge-Carrier Velocity in Semiconducting Carbon Nanotubes

Yung-Fu Chen,M. S. Fuhrer
DOI: https://doi.org/10.1103/PhysRevLett.95.236803
2005-10-07
Abstract:Charge transport in semiconducting single-walled nanotubes (SWNTs) with Schottky-barrier contacts has been studied at high bias. We observe nearly symmetric ambipolar transport with electron and hole currents significantly exceeding 25 micron-ampere, the reported current limit in metallic SWNTs due to optical phonon emission. Four simple models for the field-dependent velocity (ballistic, current saturation, velocity saturation, and constant mobility) are studied in the unipolar regime; the high-bias behavior is best explained by a velocity saturation model with a saturation velocity of 2 x 10^7 cm/s.
Materials Science,Mesoscale and Nanoscale Physics
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