Abstract:We report on a new computational model to efficiently simulate carbon nanotubebased field effect transistors (CNT-FET). In the model, a central region is formed by a semiconducting nanotube that acts as the conducting channel, surrounded by a thin oxide layer and a metal gate electrode. At both ends of the semiconducting channel, two semi-infinite metallic reservoirs act as source and drain contacts. The current-voltage characteristics are computed using the Landauer formalism, including the effect of the Schottky barrier physics. The main operational regimes of the CNT-FET are described, including thermionic and tunnel current components, capturing ambipolar conduction, multichannel ballistic transport and electrostatics dominated by the nanotube capacitance. The calculations are successfully compared to results given by more sophisticated methods based on non-equilibrium Green's function formalism (NEGF).

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to develop an efficient computational model for simulating carbon - nanotube - based field - effect transistors (CNT - FETs), especially single - walled carbon - nanotube field - effect transistors with Schottky - barrier injectors. Specifically, this model aims to capture the main physical characteristics of these devices, including phenomena such as thermionic emission, tunneling current, ambipolar conduction, ballistic transport, and multi - channel propagation, and to keep the computational complexity low so that it can be widely used in design and performance prediction. ### Core Problems of the Paper 1. **Develop an Efficient Computational Model**: In order to better understand and optimize the working performance of carbon - nanotube field - effect transistors (CNT - FETs), a model that can both accurately describe their physical behavior and be computationally efficient is required. 2. **Capture Main Physical Effects**: - **Thermionic Emission and Tunneling Current**: The influence of thermionic emission and tunneling current on device performance under different bias conditions. - **Ambipolar Conduction**: Due to the unique properties of carbon nanotubes, CNT - FETs exhibit conduction characteristics of both electrons and holes as carriers. - **Ballistic Transport**: Low back - scattering enables ballistic transport in carbon nanotubes, which is crucial for high - density current. - **Multi - channel Propagation**: The propagation modes of multiple sub - bands and their contributions to the total current. - **Capacitance - Dominated Electrostatics**: The influence of nanotube capacitance on the electrostatic characteristics of the entire device. 3. **Verify the Validity of the Model**: Verify the accuracy of this model by comparing the computational results of the model with those of the more complex non - equilibrium Green's function (NEGF) method. ### Key Assumptions and Features of the Model - **Quantum Capacitance Limit**: It is assumed that in the case of a long channel, the energy band diagram in the central region is of the flat - band type, and its energy level is mainly determined by the nanotube capacitance. - **Landauer - Büttiker Formula**: This formula is used to calculate the current, taking into account the thermionic and tunneling current components of each sub - band. - **Schottky Barrier Modulation**: The gate voltage modulates the width of the Schottky barrier, thereby changing the tunneling probability of carriers. ### Conclusion This paper has successfully developed a simple and effective model that can accurately describe the main physical effects of Schottky - barrier carbon - nanotube field - effect transistors and is highly consistent with the results of the more complex NEGF method. This provides a powerful tool for future device design and performance prediction. ### Formula Summary - **Surface Potential**: $\phi_S = qV_{GS}$ - **Energy Distribution at the Bottom of the Conduction Band**: \[ E_L(z) = -\frac{q}{2t_{ox}} \left( V_{FB} - V_{GS} + z \right) \] \[ E_R(z) = -\frac{q}{2t_{ox}} \left( V_{FB} - V_{GS} - V_{DS} + z \right) \] - **Landauer - Büttiker Formula**: \[ I = \frac{4e}{h} \sum_n \int_{-\infty}^{\infty} dE \, T_n(E) \left[ f(E - E_{FS}) - f(E - E_{FD}) \right] \] - **Transmission Coefficient under the WKB Approximation**: \[ T_n(E) = \exp \left( -\frac{2}{\hbar} \int_{z_i}^{z_f} dz \sqrt{2m^*(E_g - E)} \right) \] Through these formulas, this model can effectively simulate and predict the current - voltage characteristics of CNT - FETs.

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