A Compact Model of Carbon Nanotube Field-Effect Transistors for Various Sizes with Bipolar Characteristics

Wentao Huang,Lan Chen
DOI: https://doi.org/10.3390/electronics13071355
IF: 2.9
2024-04-04
Electronics
Abstract:Carbon nanotubes have excellent electrical properties and can be used as a new generation of semiconductor materials. This paper presents a compact model for carbon nanotube field-effect transistors (CNTFETs). The model uses a semi-empirical approach to model the current–voltage properties of CNTFETs with gate lengths exceeding 100 nm. This study introduces an innovative approach by proposing physical parametric reference lengths (Lref), which facilitate the integration of devices of varying sizes into a unified modeling framework. Furthermore, this paper develops models for the bipolar properties of carbon nanotube devices, employing two distinct sets of model parameters for enhanced accuracy. The model offers a comprehensive analysis of the different capacitances occurring between the electrodes within the device. The simulation of the model shows good agreement with the experimental measurements, confirming the model's validity. The model is implemented in the Verilog-A hardware description language, with the circuit being subsequently constructed and subjected to simulations via the HSPICE tool. The CNTFET-based inverter exhibits a gain of 7.022 and a delay time of 16.23 ps when operated at a voltage of 1.2 V.
engineering, electrical & electronic,computer science, information systems,physics, applied
What problem does this paper attempt to address?
The paper proposes a compact model for carbon nanotube field-effect transistors (CNTFETs) of different sizes, with a focus on large devices exhibiting bipolar characteristics. In this study, the authors addressed the challenge of unified modeling for devices of different sizes by introducing a physical parameter called reference length (Lref). The model takes into account the bipolar nature of carbon nanotube devices and uses two sets of different model parameters to improve accuracy. Additionally, the model analyzes different capacitances within the device and shows good agreement between simulation results and experimental measurements. The model is implemented in the Verilog-A language and circuit simulations are performed using the HSPICE tool, demonstrating a gain of 7.022 and a delay time of 16.23ps for an inverter based on CNTFETs at a voltage of 1.2V. The main contributions of the paper are as follows: 1. Proposing a virtual source extension model (VSEX) suitable for CNTFETs with gate lengths of 100nm or longer, which better simulates the current characteristics of long-channel devices. 2. Considering the bipolar characteristics of CNTFETs, which have a significant impact on the current characteristics at low gate bias, contributing to power reduction. 3. Establishing a comprehensive capacitance model to complement the current model, enabling the model to be used for circuit simulations. Overall, the paper aims to address the accurate modeling of CNTFETs of different sizes, particularly large devices, and to incorporate their bipolar behavior in the model to optimize microchip design and performance.