Abstract:High density and high semiconducting-purity single-walled carbon nanotube array (A-CNT) have recently been demonstrated as promising candidates for high-performance nanoelectronics. Knowledge of the structures and arrangement of CNTs within the arrays and their interfaces to neighboring CNTs, metal contacts, and dielectrics, as the key components of an A-CNT field effect transistor (FET), is essential for device mechanistic understanding and further optimization, particularly considering that the current technologies for the fabrication of A-CNT wafers are mainly laboratory-level solution-based processes. Here, we conduct a systematic investigation into the microstructures of A-CNT FETs mainly via cross-sectional high-resolution transmission electron microscopy and tentatively establish a framework consisting of up to 11 parameters which can be used for structure-side quality evaluation of the A-CNT FETs. The parameter ensemble includes the diameter, length (or terminal), and density distribution of CNTs, radial deformation of CNTs, array alignment defects, surface crystallography facets of contact metal, thickness distribution of high-k dielectrics (HfO2), and the contact ratios for the CNT-CNT, CNT-metal, CNT-dielectric, and CNT-substrate interfaces. Enriched array alignment defects, i.e., bundle, stacking, misorientation, and voids, are observed with a total ratio sometimes up to ∼90% in pristine A-CNTs and even up to ∼95% after the device fabrication process. Thus, they are suggested as the prevalent performance-limiting factors for A-CNT FETs. Complex interfacial structures are observed at the CNT-CNT, CNT-metal contact, and CNT-high-k dielectric interfaces, making the local environment and the property of each component CNT involved in an A-CNT FET distinct from others in terms of the diameters, radial deformation, and interactions with the local surroundings (mainly through van der Waals interactions). The present study suggests further improvements on the fabrication technology of A-CNT wafers and devices and mechanistic investigations into the impacts of complex array alignment defects and interface structures on the electrical performance of A-CNT FETs as well.

Comparative study on the characteristics among few-walled carbon nanotube array field-effect transistors

Modeling and performance characterization of double-walled carbon nanotube array field-effect transistors

Electrothermal Characterization of Carbon Nanotube Field Effect Transistors (Cntfets)

Investigation on self-heating effect in carbon nanotube field-effect transistors

Circuit Modeling and Performance Analysis of Multi-Walled Carbon Nanotube Interconnects

Circuit Modeling and Time Delay Analysis of Double-Walled Carbon Nanotube Interconnects

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

Theoretical Study of Transport Characteristics of Field Effect Transistor with Channel Made of Single-Walled Carbon Nanotube

A comparative study on SWCNT and PWCNT field-effect transistors

Field-effect Characteristics and Screening in Double-Walled Carbon Nanotube Field-Effect Transistors.

Quantum Transport Simulations of Cntfets: Performance Assessment and Comparison Study with Gnrfets

Monte Carlo study of coaxially gated CNTFETs: capacitive effects and dynamic performance

Self-aligned U-gate Carbon Nanotube Field-Effect Transistor with Extremely Small Parasitic Capacitance and Drain-Induced Barrier Lowering.

Nonideality in Arrayed Carbon Nanotube Field Effect Transistors Revealed by High-Resolution Transmission Electron Microscopy

Frequency Response of Swcnt Field-Effect Transistors with Mwcnt Interconnects

A Compact Virtual-Source Model for Carbon Nanotube Field-Effect Transistors in the Sub-10-nm Regime - Part II Extrinsic Elements, Performance Assessment, and Design Optimization

A Compact Physical Drain Current Model of Multitube Carbon Nanotube Field Effect Transistor Including Diameter Dispersion Effects

A Compact Model of Carbon Nanotube Field-Effect Transistors for Various Sizes with Bipolar Characteristics

High Performance Field-Effect Transistors Made of A Multiwall Cnx/C Nanotube Intramolecular Junction

Fabrication and Characterization of the Performance of Multi-Channel Carbon-Nanotube Field-Effect Transistors

High performance field effect transistors made of a multiwall nanotube intramolecular junction