Abstract:Ballistic n-type carbon nanotube (CNT)-based field-effect transistors (FETs) have been fabricated by contacting semiconducting single-walled CNTs (SWCNTs) using Sc or Y. The n-type CNT FETs were pushed to their performance limits through further optimizing their gate structure and insulator. The CNT FETs outperformed n-type Si metal-oxide-semiconductor (MOS) FETs with the same gate length and displayed better downscaling behavior than the Si MOS FETs. Together with the demonstration of ballistic p-type CNT FETs using Pd contacts, this technological advance is a step toward the doping-free fabrication of CNT-based ballistic complementary metal-oxide-semiconductor (CMOS) devices and integrated circuits. Taking full advantage of the perfectly symmetric band structure of the semiconductor SWCNT, a perfect SWCNT-based CMOS inverter was demonstrated, which had a voltage gain of over 160. Two adjacent n- and p-type FETs fabricated on the same SWCNT with a self-aligned top-gate realized high field mobility simultaneously for electrons (3000 cm2 V−1 s−1) and holes (3300 cm2 V−1 s−1). The CNT FETs also had excellent potential for high-frequency applications, such as a high-performance frequency doubler.

Field-effect Characteristics and Screening in Double-Walled Carbon Nanotube Field-Effect Transistors.

Modeling and performance characterization of double-walled carbon nanotube array field-effect transistors

Comparative study on the characteristics among few-walled carbon nanotube array field-effect transistors

Electrothermal Characterization of Carbon Nanotube Field Effect Transistors (Cntfets)

A comparative study on SWCNT and PWCNT field-effect transistors

Fabrication and Properties of Double Gated Double Walled Carbon Nanotube Field Effect Transistors

Investigation on self-heating effect in carbon nanotube field-effect transistors

Carbon Nanotube Lateral Field Emission Device with Embedded Field Effect Transistor

High-Field Electrical Transport and Breakdown Behavior of Double-Walled Carbon Nanotube Field-Effect Transistors

Field-Effect Transistors Based on Single-Wall Carbon Nanotubes Bundles

Hf-Contacted High-Performance Air-Stable N-Type Carbon Nanotube Transistors

Frequency Response of Swcnt Field-Effect Transistors with Mwcnt Interconnects

Anomalous field-effect characteristics in double-wall carbon nanotubes due to proximity effect

Fabrication of Nitrogen-doped Multi-walled Carbon Nanotube and Their Field Effect Transistor Properties

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

Field-effect Investigation on Single-walled Carbon Nanotube Array

Semiconductor-enriched single wall carbon nanotube networks applied to field effect transistors

Characterization of Single-Walled Carbon Nanotube and Graphene-Based Field-Effect Transistors

Self-aligned ballistic n-type single-walled carbon nanotube field-effect transistors with adjustable threshold voltage.

High-performance Doping-Free Carbon-Nanotube-based CMOS Devices and Integrated Circuits

Ballistic transport simulation of acceptor-donor C3N/C3B double-wall hetero-nanotube field effect transistors.