Abstract:The fermi-level pinning effect caused by low-order contact interface influences the performance of carbon nanotube (CNT) network field-effect transistors (FETs). In this paper, ambipolar CNT network FETs subjected to van der Waals (vdW) contact are demonstrated with the negligible Fermi-level pinning effect by using a physical transfer approach. The vdW contact method allows for the metal and CNT network to retain their intrinsic states without direct chemical bonding and interface interactions, leading to low injection barrier and contact resistance (Rc). Therefore, the field-effect mobilities of vdW metal-semiconductor (MS) contact devices in regions of dominance of the holes (μp) and electrons (μn) were 18.71 and 2.4 cm2 V−1 s−1 and yielded enhancements 2 and 10 times, respectively, beyond those of devices with typically evaporated electrodes. In addition, to develop ambipolar devices with balanced output capability, two-dimensional materials (h-BN and graphene) were inserted into the MS interface to tune the injection barrier. Because the metal work function was effectively reduced by inserting the h-BN layer, devices with h-BN inserted obtained values of μp and μn of 15.85 and 5.1 cm2 V−1 s−1, respectively. For devices with graphene, because of its field-modulated band alignment capability, μn improved to 8.38 cm2 V−1 s−1, while μp dropped slightly to 17.5 cm2 V−1 s−1. Therefore, the vdW contact method is a highly efficient integration strategy for high-performance CNT network FETs, and the different insertion layers can efficiently tune the ambipolar transportation of CNT network FETs rather than using different contact metals. This research provides an avenue for the design of future CNT network-based electronics.

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Proximity and Anomalous Field-Effect Characteristics in Double-Wall Carbon Nanotubes

Modeling and performance characterization of double-walled carbon nanotube array field-effect transistors

Comparative study on the characteristics among few-walled carbon nanotube array field-effect transistors

Field-effect Characteristics and Screening in Double-Walled Carbon Nanotube Field-Effect Transistors.

Fringing Field Effects on Electrical Resistivity of Semiconductor Nanowire-Metal Contacts

The Influence of Electro-Mechanical Effects on Resonant Electron Tunneling Through Small Carbon Nano-Peapods

Fabrication and Properties of Double Gated Double Walled Carbon Nanotube Field Effect Transistors

Carbon Nanotube Lateral Field Emission Device with Embedded Field Effect Transistor

A comparative study on SWCNT and PWCNT field-effect transistors

Gate-Controlled Quantum Interference Effects in a Clean Single-Wall Carbon Nanotube P-N Junction.

Double-gap superconducting proximity effect in nanotubes

High-Field Electrical Transport and Breakdown Behavior of Double-Walled Carbon Nanotube Field-Effect Transistors

Gated armchair nanotube and metallic field effect

Seeking Optimal Performance of Multiwall Carbon Nanotubes in Field Emission: Tight-binding Approach

Gate-tunable Contact-Induced Fermi-level Shift in Semimetal

Comprehensive Insights into Effect of Van Der Waals Contact on Carbon Nanotube Network Field-Effect Transistors

Interference effects in electronic transport through metallic single-wall carbon nanotubes

Inter-shell interaction in double walled carbon nanotubes: charge transfer and orbital mixing

Local Gate Effect of Mechanically Deformed Crossed Carbon Nanotube Junction.

Ballistic transport simulation of acceptor-donor C3N/C3B double-wall hetero-nanotube field effect transistors.