Abstract:We perform a comparative study (both for device and circuit simulations) of three carbon nanotube tunneling field-effect transistor (CNT-TFET) designs: high-K gate dielectric TFETs (HK-TFETs), hetero gate dielectric TFETs (HTFETs) and a novel CNT-TFET-based combination of light doping and hetero gate dielectric TFETs (LD-HTFETs). At device level, the effects of channel and gate dielectric engineering on the switching and high-frequency characteristics for CNT-TFET have been theoretically investigated using a quantum kinetic model. This model is based on two-dimensional non-equilibrium Green's functions solved self-consistently with Poisson's equations. It is revealed that the proposed LD-HTFET structure can significantly reduce leakage current, enhance control ability of the gate on the channel, improve the switching speed, and is more suitable for use in low-power, high-frequency circuits. At circuit level, using HSPICE with look-up table-based Verilog-A models, the performance and reliability of CNT-TFET logic gate circuits is evaluated on the basis of power consumption, average delay, stability, energy consumption and power-delay product (PDP). Simulation results indicate that, compared to a traditional CNT-TFET-based circuit, the one based on LD-HTFET has a significantly better performance (static noise margin, energy, delay, PDP). It is also observed that our proposed design exhibits better robustness under different operational conditions by considering power supply voltage and temperature variations. Our results may be useful for designing and optimizing CNTFET devices and circuits.

Fabrication and Properties of Double Gated Double Walled Carbon Nanotube Field Effect Transistors

Modeling and performance characterization of double-walled carbon nanotube array field-effect transistors

Comparative study on the characteristics among few-walled carbon nanotube array field-effect transistors

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Interface States in Gate Stack of Carbon Nanotube Array Transistors.

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Carbon Nanotube Lateral Field Emission Device with Embedded Field Effect Transistor

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A comparative study on SWCNT and PWCNT field-effect transistors

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Hf-Contacted High-Performance Air-Stable N-Type Carbon Nanotube Transistors

Self-aligned U-gate Carbon Nanotube Field-Effect Transistor with Extremely Small Parasitic Capacitance and Drain-Induced Barrier Lowering.

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

High-performance Doping-Free Carbon-Nanotube-based CMOS Devices and Integrated Circuits

Carbon Nanotube Electronics: Recent Advances

High-Performance Dual-Gate Transistors Based on Aligned Carbon Nanotubes

High performance n-type carbon nanotube field-effect transistors with chemically doped contacts

Investigation of Light Doping and Hetero Gate Dielectric Carbon Nanotube Tunneling Field-Effect Transistor for Improved Device and Circuit-Level Performance

Gate Electrostatic Controllability Enhancement in Nanotube Gate all Around Field Effect Transistor