Abstract:Carbon nanotube field-effect transistors (FETs) with passivated coaxial gate structures have been fabricated after growth of contacted suspended single wall nanotubes (SWNTs) and subsequent coating with gate dielectrics. Electron Fabry-Perot interferences are observed in the FETs indicating ballistic transport in the coated structures. Reliable production of high-performance SWNT FETs has been obtained by combining patterned growth of SWNT arrays with feed-back controlled electrical breakdown to select desired semiconducting SWNTs, making large-scale SWNT FET fabrication achievable. P-type and n-type passivated SWNT FETs have been realized through dopant-selective nanotube coatings, which enables the fabrication of active circuits based on complementary device structures.

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is how to efficiently and reliably fabricate high - performance single - walled carbon nanotube field - effect transistors (SWNT FETs), especially carbon nanotube transistors with p - type and n - type complementary structures. Specifically, the paper mainly focuses on the following aspects: 1. **Selective growth of semiconducting single - walled carbon nanotubes (s - SWNTs)**: - There are both semiconducting and metallic types in carbon nanotubes, and only the semiconducting type is suitable for field - effect transistors (FETs). Therefore, how to selectively grow or screen out semiconducting carbon nanotubes is a key issue. 2. **Improving FET performance**: - By optimizing growth parameters and using the feedback - controlled electrical breakdown method, the desired semiconducting carbon nanotubes are selected and retained, thereby improving FET performance, such as increasing the on - off current ratio (\(I_{ON}/I_{OFF}\)) and improving the subthreshold swing. 3. **Realizing p - type and n - type carbon nanotube FETs**: - The paper shows that p - type and n - type carbon nanotube FETs can be stably fabricated through selective doping coatings (such as Cr doping and Al₂O₃ buffer layers), which is crucial for constructing complementary electronic circuits. 4. **Feasibility of large - scale production**: - Through chemical vapor deposition (CVD) combined with solid Fe catalysts and feedback - controlled electrical breakdown techniques, high - yield suspended carbon nanotubes spanning micron - scale gaps are achieved, making it possible to mass - produce high - performance carbon nanotube FETs. ### Main solutions - **Selective growth and screening**: Patterned growth and feedback - controlled electrical breakdown methods are utilized to select and retain the desired semiconducting carbon nanotubes. - **Doping and coating**: Stable p - type and n - type carbon nanotube FETs are successfully fabricated through means such as Cr doping and Al₂O₃ buffer layers. - **Process optimization**: Low - pressure chemical vapor deposition (LPCVD) is used to uniformly coat carbon nanotubes, and an automatic feedback control system is combined to protect the remaining carbon nanotubes, ensuring the reliability of the device. These methods not only improve the performance of FETs but also lay the foundation for future nano - electronic technology applications.

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