Abstract:The control of the performance of single-walled carbon nanotube (SWCNT) random network-based transistors is of critical importance for their applications in electronic devices, such as complementary metal oxide semiconducting (CMOS)-based logics. In ambient conditions, SWCNTs are heavily p-doped by the H2O/O2 redox couple, and most doping processes have to counteract this effect, which usually leads to broadened hysteresis and poor stability. In this work, we coated an SWCNT network with various common polymers and compared their thin-film transistors' (TFTs') performance in a nitrogen-filled glove box. It was found that all polymer coatings will decrease the hysteresis of these transistors due to the partial removal of charge trapping sites and also provide the stable control of the doping level of the SWCNT network. Counter-intuitively, polymers with electron-withdrawing functional groups lead to a dramatically enhanced n-branch in their transfer curve. Specifically, SWCNT TFTs with poly (vinylidene fluoride) coating show an n-type mobility up to 61 cm2/Vs, with a decent on/off ratio and small hysteresis. The inverters constructed by connecting two ambipolar TFTs demonstrate high gain but with certain voltage loss. P-type or n-type doping from polymer coating layers could suppress unnecessary n- or p-branches, shift the threshold voltage and optimize the performance of these inverters to realize rail-to-rail switching. Similar devices also demonstrate interesting antiambipolar performance with tunable on and off voltage when tested in a different configuration.

Coaxial p- and n-type carbon nanotube transistors with dopant-selective coatings

Polymer Coating Enabled Carrier Modulation for Single-Walled Carbon Nanotube Network Inverters and Antiambipolar Transistors

Hf-Contacted High-Performance Air-Stable N-Type Carbon Nanotube Transistors

High performance n-type carbon nanotube field-effect transistors with chemically doped contacts

Nanotube and Nanowire Transistors

High-performance Doping-Free Carbon-Nanotube-based CMOS Devices and Integrated Circuits

Carbon Nanotube Lateral Field Emission Device with Embedded Field Effect Transistor

Carbon Based High Performance Doping-Free Nanoelectronic and Optoelectronic Devices

Field-Effect Transistors Based on Single-Wall Carbon Nanotubes Bundles

Unipolar P-Type Single-Walled Carbon Nanotube Field-Effect Transistors Using TTF–TCNQ As the Contact Material

Using Nanoscale Thermocapillary Flows to Create Arrays of Purely Semiconducting Single-Walled Carbon Nanotubes

Semiconductor-enriched single wall carbon nanotube networks applied to field effect transistors

Efficient and Reversible Electron Doping of Semiconductor-Enriched Single-Walled Carbon Nanotubes by Using Decamethylcobaltocene.

Fabrication and Properties of Double Gated Double Walled Carbon Nanotube Field Effect Transistors

Self-aligned ballistic n-type single-walled carbon nanotube field-effect transistors with adjustable threshold voltage.

Fabrication of Nitrogen-doped Multi-walled Carbon Nanotube and Their Field Effect Transistor Properties

Highly uniform and stable n-type carbon nanotube transistors by using positively charged silicon nitride thin films

Carbon Nanotube Electronics: Recent Advances

High-Performance, Hysteresis-Free Carbon Nanotube FETs via Directed Assembly

Self-aligned Electrodes for Suspended Carbon Nanotube Structures

High-Performance Complementary Transistors and Medium-Scale Integrated Circuits Based on Carbon Nanotube Thin Films.