Abstract:Carbon nanotube FETs show great promise for beyond-Si and monolithic 3D electronics, however there are still fundamental questions to explore. In particular, controlled N- and P- doping is a fundamental process module which can be used to engineer semiconductor resistance in un-gated regions such as the contact or extension, as well as optimize band-to-band tunneling leakage [1-4]. To-date both N- and P- doping has been demonstrated for CNT, but the optimal strategies for doping control and carrier density quantification have not been determined. In this work, we present a study of N- and P- doping using solid-state dopants and doping control strategy using a dielectric barrier of tunable thickness. A TCAD evaluation reveals the tradeoffs between carrier density and mobility for increasing dielectric barrier thickness, and reveals the critical role of dielectric constant in optimizing performance of spacer doping [5]. Multiple characterization approaches under evaluation help to correlate doping strength to experimentally measurable quantities with insight into the doping mechanisms. Finally, we will summarize potential approaches for improving doping control and quantification, and progress towards integration of the doping in highly-scaled high-performance carbon nanotube FETs [6]. [1] Z. Zhang, et al., “Complementary carbon nanotube metal-oxide-semiconductor field-effect transistors with localized solid-state extension doping,” Nature Electronics, 2023. [2] Q. Lin, et al., “Band-to-band Tunneling Leakage Current Characterization and Projection in Carbon Nanotube Transistors,” ACS Nano, 2023. [3] G. Zeevi, et al., “PN Junction and band to band tunneling in carbon nanotube transistors at room temperature,” Nanotechnology, 2021. [4] L. Liyanage, et al., “VLSI-compatible carbon nanotube doping technique with low work-function metal oxides,” Nano Letters, 2014. [5] C. Gilardi et al., “Barrier Booster for Remote Extension Doping and its DTCO for 1D & 2D FETs”, IEDM 2023 [6] S.Li, et al., “High-performance and low parasitic capacitance CNT MOSFET: 1.2 mA/μm at VDS of 0.75 V by self-aligned doping in sub-20 nm spacer,” IEDM 2023.

Highly uniform and stable n-type carbon nanotube transistors by using positively charged silicon nitride thin films

High performance n-type carbon nanotube field-effect transistors with chemically doped contacts

Hf-Contacted High-Performance Air-Stable N-Type Carbon Nanotube Transistors

Fabrication of air-stable n-type carbon nanotube thin-film transistors on flexible substrates using bilayer dielectrics

Nanotube and Nanowire Transistors

Using Nanoscale Thermocapillary Flows to Create Arrays of Purely Semiconducting Single-Walled Carbon Nanotubes

Efficient and Reversible Electron Doping of Semiconductor-Enriched Single-Walled Carbon Nanotubes by Using Decamethylcobaltocene.

N-Type Field-Effect Transistors Made of an Individual Nitrogen-Doped Multiwalled Carbon Nanotube.

Contact Engineering and Channel Doping for Robust Carbon Nanotube NFETs

Air-stable n-type transistors based on assembled aligned carbon nanotube arrays and their application in complementary metal-oxide-semiconductor electronics

Coaxial p- and n-type carbon nanotube transistors with dopant-selective coatings

High-performance Doping-Free Carbon-Nanotube-based CMOS Devices and Integrated Circuits

Carbon Based High Performance Doping-Free Nanoelectronic and Optoelectronic Devices

Characterization and Control of Carbon Nanotube Doping

Chemically induced air- stable unipolar-to-ambipolar conversion of carbon nanotube field effect transistors

Complementary carbon nanotube metal–oxide–semiconductor field-effect transistors with localized solid-state extension doping

Fabrication of Nitrogen-doped Multi-walled Carbon Nanotube and Their Field Effect Transistor Properties

Polymer functionalization for air-stable n-type carbon nanotube field-effect transistors

Carbon Nanotube Field Effect Transistors Based on Schottky Contact

Air-stable N-type Printed Carbon Nanotube Thin Film Transistors for CMOS Logic Circuits

Building high performance transistors on carbon nanotube channel