Abstract:Carbon nanotube field-effect transistors (CNT FETs) have been demonstrated to exhibit high performance only through low-temperature fabrication process and require a low thermal budget to construct monolithic three-dimensional (M3D) integrated circuits (ICs), which have been considered a promising technology to meet the demands of high-bandwidth computing and fully functional integration. However, the lack of high-quality CNT materials at the upper layer and a low-parasitic interlayer dielectric (ILD) makes the reported M3D CNT FETs and ICs unable to provide the predicted high performance. In this work, we demonstrate a multilayer stackable process for M3D integration of high-performance aligned carbon nanotube (A-CNT) transistors and ICs. A low-kappa (similar to 3) interlayer SiO2 layer is prepared from spin-on-glass (SOG) through processes with a highest temperature of 220 C-degrees, presenting low parasitic capacitance between two transistor layers and excellent planarization to offer an ideal surface for the A-CNT and device fabrication process. A high-quality A-CNT film with a carrier mobility of 650 cm(2) V-1 s(-1) is prepared on the ILD layer through a clean transfer process, enabling the upper CNT FETs fabricated with a low-temperature process to exhibit high on-state current (1 mA mu m(-1)) and peak transconductance (0.98 mS mu m(-1)). The bottom A-CNT FETs maintain pristine high performance after undergoing the ILD growth and upper FET fabrication. As a result, 5-stage ring oscillators utilizing the M3D architecture show a gate propagation delay of 17 ps and an active region of approximately 100 mu m(2), representing the fastest and the most compact M3D ICs to date.

Carbon Nanotube Field‐Effect Transistors: Towards Entire‐Carbon‐Nanotube Circuits: the Fabrication of Single‐Walled‐Carbon‐Nanotube Field‐Effect Transistors with Local Multiwalled‐Carbon‐Nanotube Interconnects (adv. Mater. 13/2009)

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

Circuit Modeling and Performance Analysis of Multi-Walled Carbon Nanotube Interconnects

Carbon Nanotube Lateral Field Emission Device with Embedded Field Effect Transistor

Nanoelectromechanical Switches with Vertically Aligned Carbon Nanotubes

Nanotube and Nanowire Transistors

Fabrication of Nitrogen-doped Multi-walled Carbon Nanotube and Their Field Effect Transistor Properties

Using Nanoscale Thermocapillary Flows to Create Arrays of Purely Semiconducting Single-Walled Carbon Nanotubes

Progress on a Carbon Nanotube Field-Effect Transistor Integrated Circuit: State of the Art, Challenges, and Evolution

Carbon Nanotube Technology For Solid State And Vacuum Electronics

Local Silicon-Gate Carbon Nanotube Field Effect Transistors Using Silicon-On-Insulator Technology

Carbon nanotube-based CMOS transistors and integrated circuits

Field-effect transistors assembled from functionalized carbon nanotubes

Fabrication and Properties of Double Gated Double Walled Carbon Nanotube Field Effect Transistors

Monolithic Integration of Carbon Nanotube Devices with Silicon Mos Technology

Carbon Nanotube Integrated Circuit Technology: Purification, Assembly and Integration

Field-Effect Transistors Based on Single-Wall Carbon Nanotubes Bundles

Carbon Nanotube Electronics: Recent Advances

High-Performance Complementary Transistors and Medium-Scale Integrated Circuits Based on Carbon Nanotube Thin Films.

Logic Ciucuits Using Solution-processed Single-walled Carbon Nanotue Transistors

Functionalized Metallic Single-Walled Carbon Nanotubes as a High-Performance Single-Molecule Organic Field Effect Transistor: An ab Initio Study