Abstract: The silicon-based electronic technology has made quite a great progress in the past five decades since the invention of the integrated circuit [1]. The advance is maintained primarily through the size scaling of the devices, i.e., metal-oxide-semiconductor field-effect transistor (MOSFET), which has resulted in many successive generations of devices with increased transistor performance and density. In case of the continual decrease for the device dimensions at a present speed, most of scientists forecast that the development of the integrated circuit will meet its physical and theoretical limit soon, perhaps in next decade [2–4]. To keep the device performance continuing to update, the seeking and preparation of new technologies is mandatory [5]. So far, two distinct routes have been taken to address that issue. One of them is to adopt the revolutionary technologies based on totally new concepts, e.g., two-terminal molecular devices [6], quantum computing [7], spintronics [8], and so on. However, these technologies will be incompatible with present application developed from silicon-based electronic industry. In the other case, attention is paid to a more evolutionary approach that is based on the well-established three terminal transistor concept, but utilizes alternative materials, specially single-walled carbon nanotubes (SWCNTs) that possess many unique advantages including onedimensional nanoscale structure as well as the excellent electrical and optical properties [5]. High-mobility, low-defect structure and intrinsic nanometer scale of carbon nanotubes (CNTs) have led to an intense research effort into the viability of utilizing carbon-nanotube field-effect transistors (CNTFETs) as a replacement for, or a complement to, future semiconductor devices [9–17].

Local Silicon-Gate Carbon Nanotube Field Effect Transistors Using Silicon-On-Insulator Technology

Novel Local Silicon-Gate Carbon Nanotube Transistors Combining Silicon-on-Insulator Technology for Integration

Applying SOI Technology on Carbon Nanotube Transistors

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

Aligned carbon nanotube integrated circuit downsizing toward a sub-10 nm node

Interface States in Gate Stack of Carbon Nanotube Array Transistors.

Carbon Nanotube Materials for Future Integrated Circuit Applications

A novel local bottom-gate carbon nanotube field effect transistor on SOI

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

High-Performance Complementary Transistors and Medium-Scale Integrated Circuits Based on Carbon Nanotube Thin Films.

Integrating carbon nanotubes into silicon by means of vertical carbon nanotube field-effect transistors.

Carbon nanotube-based CMOS transistors and integrated circuits

Progress on a Carbon Nanotube Field-Effect Transistor Integrated Circuit: State of the Art, Challenges, and Evolution

Nanowelded Multichannel Carbon-Nanotube Field-Effect Transistors (MC-CNTFETs)

Scaling carbon nanotube CMOS FETs towards quantum limit

Carbon Nanotube Field‐Effect Transistors: Towards Entire‐Carbon‐Nanotube Circuits: the Fabrication of Single‐Walled‐Carbon‐Nanotube Field‐Effect Transistors with Local Multiwalled‐Carbon‐Nanotube Interconnects (adv. Mater. 13/2009)

Carbon Nanotube Electronics - Materials, Devices, Circuits, Design, Modeling, and Performance Projection

The Application of Carbon Nanotubes in CMOS Integrated Circuits

Carbon Based High Performance Doping-Free Nanoelectronic and Optoelectronic Devices

Complementary Transistors Based on Aligned Semiconducting Carbon Nanotube Arrays

High-performance Doping-Free Carbon-Nanotube-based CMOS Devices and Integrated Circuits