Abstract:Abstract Transistors on aligned semiconducting carbon nanotubes (A-CNTs) have been considered a promising substitute for mainstream Si transistors to extend integrated circuit (IC) technology owing to their potential advantages of easy miniaturization and high energy efficiency, but whether A-CNT FETs can be scalably fabricated with ultrascaled whole dimensions while maintaining high performance remains questionable. Here, we explore the whole size scaling down potential of A-CNT transistors and demonstrate the possibility of implementing such small-geometry transistors in ultra-large-scale ICs that consist of billions of transistors. A-CNT transistors with a contacted gate pitch (CGP) of 175 nm have been achieved by simultaneously scaling the gate length and the contact length, and exhibit an on-current of 2.24 mA/μm and a peak transconductance of 1.64 mS/μm, surpassing silicon 45 nm node transistors in terms of both size and electronic performance. A static random-access memory (SRAM) cell has been built using six A-CNT transistors in an area of 0.967 μm2, which is comparable to the commercial silicon 90 nm technology node and is the smallest SRAM cell based on non-Si semiconductors. Furthermore, a full-contact structure is introduced between the metal and A-CNTs to achieve a contact resistance as low as 90 Ω·μm and to reduce the dependence on the contact length. A-CNT transistors downsized to a CGP of 55 nm (corresponding to the silicon 10 nm technology node) have been demonstrated to outperform 10 nm Si MOS transistors in terms of carrier mobility and Fermi velocity, indicating the tremendous potential of A-CNT transistors in high-performance digital ICs of sub 10 nm nodes.

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Local Silicon-Gate Carbon Nanotube Field Effect Transistors Using Silicon-On-Insulator Technology

Applying SOI Technology on Carbon Nanotube Transistors

Novel Local Silicon-Gate Carbon Nanotube Transistors Combining Silicon-on-Insulator Technology for Integration

Aligned carbon nanotube integrated circuit downsizing toward a sub-10 nm node

Interface States in Gate Stack of Carbon Nanotube Array Transistors.

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

A Novel Nanosheet Reconfigurable Field Effect Transistor with Dual-Doped Source/drain

Carbon Nanotube Lateral Field Emission Device with Embedded Field Effect Transistor

Monolithic Heterogeneous Integration of BEOL Power Gating Transistors of Carbon Nanotube Networks with FEOL Si Ring Oscillator Circuits

Complementary carbon nanotube metal–oxide–semiconductor field-effect transistors with localized solid-state extension doping

High Performance Junctionless FDSOI SiGe Channel P-Finfet with High ION/IOFF Ratio and Excellent SS

Locally Thinned, Core-Shell Nanowire-Integrated Multi-gate MoS2 Transistors for Active Control of Extendable Logic

Simulation of Novel Nano Low-Dimensional FETs at the Scaling Limit

Scaling carbon nanotube CMOS FETs towards quantum limit

Design and Analysis of Gate Stack Silicon-on-Insulator Nanosheet FET for Low Power Applications

High-Performance Complementary Transistors and Medium-Scale Integrated Circuits Based on Carbon Nanotube Thin Films.

Sub-10 Nm Silicon FinFET Devices on SOI Substrate Made by Block Copolymer Lithography

Novel Localized-SOI MOSFET's Combining the Advantages of SOI and Bulk Substrates for Highly-Scaled Devices

Carbon Nanotube Network Film-Based Field-Effect Transistor Interface State Optimization by Ambient Air Annealing