Abstract:Field-effect transistors (FETs) have been fabricated using double-walled carbon nanotubes (DWCNTs), and electrical transport measurements have been carried out on 125 DWCNT FETs. Among these devices, 52 were found to show basically semiconducting field-effect characteristics, 44 show metallic characteristics, and 29 show neither pure semiconducting nor metallic characteristics. These 3 distinct types of field-effect characteristics were identified as resulting from the semiconducting (S)-S, metallic (M)-M or M-S, and S-M combinations of the two shells of the DWCNT. While the S-S and M-M or M-S DWCNT devices exhibit similar field-effect characteristics to those by single-walled carbon nanotube (SWCNT) devices, the S-M device responds uniquely to the external gate voltage. In particular, it was found that free charges in the inner metallic shell may screen the outer semiconducting shell from the gate effect and that the screening is directly related to the intershell interaction, which increases with increasing temperature and tube diameter. The screening is disadvantageous to the performance of DWCNT FETs, and a similar effect is expected to occur in MWCNTs.

Proximity and Anomalous Field-Effect Characteristics in Double-Wall Carbon Nanotubes

Anomalous field-effect characteristics in double-wall carbon nanotubes due to proximity effect

Fringing Field Effects on Electrical Resistivity of Semiconductor Nanowire-Metal Contacts

Double-gap superconducting proximity effect in nanotubes

Modeling and performance characterization of double-walled carbon nanotube array field-effect transistors

Fringing Field Effects in Semiconductor Nanowire Double Heterostructures

The Influence of Electro-Mechanical Effects on Resonant Electron Tunneling Through Small Carbon Nano-Peapods

Interference effects in electronic transport through metallic single-wall carbon nanotubes

Modeling Tunneling for the Unconventional Superconducting Proximity Effect

Field-effect Characteristics and Screening in Double-Walled Carbon Nanotube Field-Effect Transistors.

Seeking Optimal Performance of Multiwall Carbon Nanotubes in Field Emission: Tight-binding Approach

Non-local superconducting proximity effect enhanced by electron-electron interaction in a ballistic double nanowire.

Quantum Mechanical Understanding of Field Dependence of the Apex Barrier of A Single-Wall Carbon Nanotube

Gated armchair nanotube and metallic field effect

Effect of Peierls Distortion Ou Field Emission of Carbon Nanotubes

Transverse field-induced effects in carbon nanotubes

Proximity-induced charge density wave in a metallic system

Gate-Controlled Quantum Interference Effects in a Clean Single-Wall Carbon Nanotube P-N Junction.

Anode Distance Effect on Field Electron Emission from Carbon Nanotubes: A Molecular/Quantum Mechanical Simulation

High-Field Electrical Transport and Breakdown Behavior of Double-Walled Carbon Nanotube Field-Effect Transistors

Quantum-mechanical Investigation of Field-Emission Mechanism of a Micrometer-Long Single-Walled Carbon Nanotube.