High-Field Electrical Transport and Breakdown Behavior of Double-Walled Carbon Nanotube Field-Effect Transistors

S. Wang,X. L. Liang,Q. Chen,K. Yao,L. -M. Peng
DOI: https://doi.org/10.1016/j.carbon.2006.11.032
IF: 10.9
2007-01-01
Carbon
Abstract:Double-walled carbon nanotube (DWCNT) field-effect transistors have been fabricated, and their high-field transport and breakdown behavior investigated, both at room temperature and temperatures down to 4.2K. In some cases controlled shell-by-shell breakdown of the DWCNT is realized, and field-effect measurements before and after breakdown reveal the nature of the two shells of the DWCNT and their relationship to the field-effect characteristics of the device. The breakdown of the DWCNT is found typically to occur within a few ms, opening up a gap of typically a few tens of nanometers.
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