Evaluating bandgap distributions of carbon nanotubes via scanning electron microscopy imaging of the Schottky barriers.

Yujun He,Jin Zhang,Dongqi Li,Jiangtao Wang,Qiong Wu,Yang Wei,Lina Zhang,Jiaping Wang,Peng Liu,Qunqing Li,Shoushan Fan,Kaili Jiang
DOI: https://doi.org/10.1021/nl403158x
IF: 10.8
2013-01-01
Nano Letters
Abstract:We show that the Schottky barrier at the metal-single walled carbon nanotube (SWCNT) contact can be clearly observed in scanning electron microscopy (SEM) images as a bright contrast segment with length up to micrometers due to the space charge distribution in the depletion region. The lengths of the charge depletion increase with the diameters of semiconducting SWCNTs (s-SWCNTs) when connected to one metal electrode, which enables direct and efficient evaluation of the bandgap distributions of s-SWCNTs. Moreover, this approach can also be applied for a wide variety of semiconducting nanomaterials, adding a new function to conventional SEM.
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