Abstract:Polymer-sorted high-density carbon nanotube (CNT) arrays have shown great potential to extend the silicon-based Moore's law. Imaging the CNT arrays on insulators like SiO 2 /Si using low-voltage scanning electron microscopy (LVSEM) to acquire array information like the alignment, density, and distribution of residual polymers is necessary. Such a task remains challenging due to the nanoscale CNT body (1–2 nm in diameter), nanoscale tube-to-tube separation (1–10 nm), the broadening of the apparent diameter, and the complex image contrast caused by the insulating substrate and polymer residues. In this study, the imaging mechanism for this system is investigated. Two methods are developed to separate the three dominant contrasts, i.e. topographic contrast, charge contrast, and material contrast, by selecting the take-off angle and energy of the emitted electrons as enabled by changing the working distance or the deceleration voltage. The contrast formation and separation mechanism is further confirmed by the dynamic contrast evolution due to the electron-beam-induced deposition of amorphous carbon. The contrast separation method is further applied to an individual CNT, reducing its apparent diameter from 36 nm to 6 nm. This result hints at the potential for LVSEM to count the density exceeding 150 CNTs/μm of CNT arrays. Finally, a comparative study of LVSEM and transmission electron microscopy confirms the failure of LVSEM to resolve CNTs in a bundle. The results suggest that the density of CNT arrays may be underestimated in reported SEM data. The proposed method can serve as a useful tool for further study and application of arrayed CNTs.

Scanning Electron Microscopy Imaging of Single-Walled Carbon Nanotubes and Devices

Scanning Electron Microscopy Imaging of Single-Walled Carbon Nanotubes on Substrates

Direct discrimination between semiconducting and metallic single-walled carbon nanotubes with high spatial resolution by SEM

In-situ studies of electron field emission of single carbon nanotubes inside the TEM

Electron Beam Interaction with Carbon Nanotubes in Scanning Electron Microscope: Mechanisms and Applications

Direct Identification of Metallic and Semiconducting Single-Walled Carbon Nanotubes in Scanning Electron Microscopy.

Nanoscale Imaging of Surface Topography and Reactivity with the Scanning Electrochemical Microscope

High-Resolution Transmission Electron Microscopy Imaging Of Carbon Nanostructures

Imaging mechanism and contrast separation in low-voltage scanning electron microscopy imaging of carbon nanotube arrays on SiO2/Si substrate

Electrochemical Identification of Metallic and Semiconducting Single-Walled Carbon Nanotubes

Imaging mechanism and contrast separation in low-voltage scanning electron microscopy imaging of carbon nanotube arrays on SiO 2 /Si substrate

Study on Electronic Properties of Single-Wall Carbon Nanotubes

Evaluating bandgap distributions of carbon nanotubes via scanning electron microscopy imaging of the Schottky barriers.

Near-Field Optical Identification of Metallic and Semiconducting Single-Walled Carbon Nanotubes

SEM imaging of insulating specimen through a transparent conducting veil of carbon nanotube

Field-effect Investigation on Single-walled Carbon Nanotube Array

Electronic Raman Scattering in Suspended Semiconducting Carbon Nanotubes

Measuring Electronic Transport in a Single Carbon Nanotube Inside the SEM

Field emission patterns with atomic resolution of single-walled carbon nanotubes by field emission microscopy

Quantitative Thermal Imaging of Single-Walled Carbon Nanotube Devices by Scanning Joule Expansion Microscopy.

Field emission properties of single-wall carbon nanotubes studied by FEM