Abstract:Transition metal dichalcogenides (TMDs) are layered semiconducting van der Waal crystals and promising materials for a wide range of electronic and optoelectronic devices. Realizing practical electrical and optoelectronic device applications requires a connection between a metal junction and a TMD semiconductor. Hence, a complete understanding of electronic band alignments and the potential barrier heights governing the transport through a metal-TMD-metal junction is critical. But, there is a knowledge gap; it is not clear how the energy bands of a TMD align while in contact with a metal as a function of the number of layers. In pursuit of removing this knowledge gap, we have performed conductive atomic force microscopy (CAFM) of few layered (1-5) MoS2 immobilized on ultra-flat conducting Au surfaces (root mean square (RMS) surface roughness <0.2 nm) and indium tin oxide (ITO) substrate (RMS surface roughness <0.7 nm) forming a vertical metal (conductive-AFM tip)-semiconductor-metal device. We have observed that the current increases as the number of layers increases up to 5 layers. By applying Fowler-Nordheim tunneling theory, we have determined the barrier heights for different layers and observed that the barrier height decreases as the number of layers increases. Using density functional theory (DFT) calculation, we successfully demonstrated that the barrier height decreases as the layer number increases. By illuminating the TMDs on a transparent ultra-flat conducting ITO substrate, we observed a reduction in current when compared to the current measured in the dark, hence demonstrating negative photoconductivity. Our study provides a fundamental understanding of the local electronic and optoelectronic behaviors of TMD-metal junction, and may pave an avenue toward developing nanoscale electronic devices with tailored layer-dependent transport properties.

Energy-Level Alignment at Interfaces between Transition-Metal Dichalcogenide Monolayers and Metal Electrodes Studied with Kelvin Probe Force Microscopy

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Energy Level Alignment At The C-60/Monolayer-Ws2 Interface On Insulating And Conductive Substrates

Energy Level Alignment at the C<sub>60</sub>/Monolayer‐WS<sub>2</sub> Interface on Insulating and Conductive Substrates

Energy Level Alignment at the C 60 /Monolayer‐WS 2 Interface on Insulating and Conductive Substrates

Layer Dependent Interfacial Transport and Optoelectrical Properties of MoS2 on Ultra-flat Metals

Molecular electronic level alignment at weakly coupled organic film/metal interfaces.

Systematic Study of Electronic Structure and Band Alignment of Monolayer Transition Metal Dichalcogenides in Van Der Waals Heterostructures

Metal Contacts On Physical Vapor Deposited Monolayer Mos

Sub 20 meV Schottky barriers in metal/MoTe2 junctions

Atomically Flat Dielectric Patterns for Band Gap Engineering and Lateral Junction Formation in MoSe$_2$ Monolayers

Strain‐Engineered Level Alignment in the MoTe2/WSe2 Heterobilayer

Band alignments, conduction band edges and intralayer bandgap renormalisation in MoSe2/WSe2 heterobilayers

Observation of Strong Valley Magnetic Response in Monolayer Transition Metal Dichalcogenide Alloys of Mo0.5W0.5Se2 and Mo0.5W0.5Se2/WS2 Heterostructures

Defect-Dependent Optoelectronic Properties at a Molecular P-Dopant/monolayer/monolayer WS2 Interface

Probing Local Electronic Property of Two-Dimensional Materials by Atomicforce Microscopy

Enhanced Conductivity Along Lateral Homojunction Interfaces of Atomically Thin Semiconductors

Modulating the Electronic Structure and In-Plane Activity of Two-Dimensional Transition Metal Dichalcogenide (mos2, TaS2, NbS2) Monolayers by Interfacial Engineering

Photo-physics and electronic structure of lateral graphene/MoS2 and metal/MoS2 junctions

Energy Level Alignment at Alq/metal Interfaces

Band Alignment Engineering by Twist Angle and Composition Modulation for Heterobilayer