Energy Level Alignment at the C 60 /Monolayer‐WS 2 Interface on Insulating and Conductive Substrates
Jie Ma,Patrick Amsalem,Thorsten Schultz,Dongguen Shin,Xiaomin Xu,Norbert Koch
DOI: https://doi.org/10.1002/aelm.202100425
IF: 6.2
2021-07-15
Advanced Electronic Materials
Abstract:<p>Combining a transition metal dichalcogenide monolayer (ML) and molecular semiconductors is an attractive route for forming nanoscale hybrid van der Waals heterostructures with potentially novel (opto-)electronic properties. The energy level alignment at the hybrid interface governs these properties, but precise determination of the interfacial electronic structure is challenging due to the pronounced excitonic nature of both components and the non-trivial band structure of the inorganic ML. For instance, dielectric screening by the supporting substrate of such a heterostructure may impact the energy levels, but very few experiments have attended to this important issue to date. Here, it is shown how photoelectron spectroscopy can be used to unravel the energy level line-up at the C<sub>60</sub>/ML-WS<sub>2</sub> interface supported on an insulating (sapphire) and a semi-metallic (graphite) substrates. On both substrates, an almost identical staggered type-II level alignment is determined. However, C<sub>60</sub>/ML-WS<sub>2</sub> exhibits stronger n-type characteristics on sapphire, which is suggested to be due to native donor-type defects of ML-WS<sub>2</sub>. While these remain occupied and active on the insulating substrate, they are emptied into the charge reservoir of the conductive substrate. These insights should be considered in the future design of functional heterostructures of inorganic ML and molecular semiconductor materials.</p>
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology