Abstract:Recent experiment has uncovered semimetal bismuth (Bi) as an excellent electrical contact to monolayer MoS2 with ultralow contact resistance. The contact physics of the broader semimetal/monolayer-semiconductor family beyond Bi/MoS2, however, remains largely unexplored thus far. Here we perform a comprehensive first-principle density functional theory investigation on the electrical contact properties between six archetypal two-dimensional (2D) transition metal dichalcogenide (TMDC) semiconductors, i.e. MoS2, WS2, MoSe2, WSe2, MoTe2 and WTe2, and two representative types of semimetals, Bi and antimony (Sb). As Bi and Sb work functions energetically aligns well with the TMDC conduction band edge, Ohmic or nearly-Ohmic n-type contacts are prevalent. The interlayer distance of semimetal/TMDC contacts are significantly larger than that of the metal/TMDC counterparts, which results in only weak metalization of TMDC upon contact formation. Intriguingly, such weak metalization generates semimetal-induced gap states (SMIGSs) that extends below the conduction band minimum, thus offering an effective mechanism to reduce or eliminate the n-type Schottky barrier height (SBH) while still preserving the electronic structures of 2D TMDC. A modified Schottky-Mott rule that takes into account SMIGS, interface dipole potential, and Fermi level shifting is proposed, which provides an improved agreement with the density functional theory-simulated SBH. We further show that the tunneling-specific resistivity of Sb/TMDC contacts are generally lower than the Bi counterparts, thus indicating a better charge injection efficiency can be achieved through Sb contacts. Our findings reveal the promising potential of Bi and Sb as excellent companion electrode materials for advancing 2D semiconductor device technology.

Canonical Schottky barrier heights of the transition metal dichalcogenide monolayers in contact with a metal

An Atomically Resolved Schottky Barrier Height Approach for Bridging the Gap between Theory and Experiment at Metal-Semiconductor Heterojunctions

Comparative study of the micro-mechanism of charge redistribution at metal-semiconductor and semimetal-semiconductor interfaces: Pt(Ni)-MoS2 and Bi-MoS2(WSe2) as the prototype

Sub 20 meV Schottky barriers in metal/MoTe2 junctions

The mechanical, electronic and optical properties of two-dimensional transition metal chalcogenides MX2 and M2X3 (M = Ni, Pd; X = S, Se, Te) with hexagonal and orthorhombic structures

Electronic structure of transition metal dichalcogenides monolayers 1H-MX2 (M = Mo, W; X = S, Se, Te) from ab-initio theory: new direct band gap semiconductors

Optical spectroscopic detection of Schottky barrier height at a two-dimensional transition-metal dichalcogenide/metal interface

Interfacial Properties of Monolayer and Bilayer MoS 2 Contacts with Metals: Beyond the Energy Band Calculations

Electronic Structure, mass fluctuation, and Localized Bond Properties of two-dimensional double-layer transition metal chalcogenide MX$_2$ (M = Mo, W; X = S, Se, Te) Calculated Based on Density Functional Theory and BBC model

Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations

Computational Insights into Schottky Barrier Heights: Graphene and Borophene Interfaces with H- and H́-XSi2N4 (X = Mo, W) Monolayers.

Electronic, optical and transport properties of van der Waals Transition-metal Dichalcogenides Heterostructures: A First-principle Study

Semimetal contacts to monolayer semiconductor: weak metalization as an effective mechanism to Schottky barrier lowering

The Role of Permanent and Induced Electrostatic Dipole Moments for Schottky Barriers in Janus MXY/Graphene Heterostructures: a First Principles Study

Chalcogen Vacancies In Monolayer Transition Metal Dichalcogenides And Fermi Level Pinning At Contacts

Tunable Phase Stability and Contact Resistance of Monolayer Transition Metal Dichalcogenides Contacts with Metal

Achieving ultra-low contact barriers in MX2/SiH (M = Nb, Ta; X = S, Se) metal-semiconductor heterostructures: first-principles prediction

Tunable Schottky contacts in MSe 2 /NbSe 2 (M = Mo and W) heterostructures and promising application potential in field-effect transistors.

Charge distribution at metal-multilayered semiconductor interfaces

Schottky-Barrier-Free Contacts with Two-Dimensional Semiconductors by Surface-Engineered MXenes

Prospects of Zero Schottky Barrier Height in a Graphene Inserted MoS2-Metal Interface