Low Temperature Nanoscale Electronic Transport on the MoS_2 surface

R.Thamankar,T. L. Yap,K. E. J. Goh,C. Troadec,C. Joachim

DOI: https://doi.org/10.1063/1.4818998

2013-08-15

Abstract:Two-probe electronic transport measurements on a Molybdenum Disulphide (MoS_2) surface were performed at low temperature (30K) under ultra-high vacuum conditions. Two scanning tunneling microscope tips were precisely positioned in tunneling contact to measure the surface current-voltage characteristics. The separation between the tips is controllably varied and measured using a high resolution scanning electron microscope. The MoS_2 surface shows a surface electronic gap (E_S) of 1.4eV measured at a probe separation of 50nm. Furthermore, the two- probe resistance measured outside the electronic gap shows 2D-like behavior with the two-probe separation.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

### What problems does this paper attempt to solve?

This paper aims to study the nanoscale electron transport properties on the surface of molybdenum disulfide (MoS₂) at low temperature (30K). Specifically, the author conducts two - probe current - voltage (I - V) measurements with a scanning tunneling microscope (STM) probe to explore the following problems:

1. **Electron energy gap on the MoS₂ surface**:
- Determine the electron energy gap (E_S) on the MoS₂ surface at different probe spacings. The experimental results show that at a probe spacing of 50nm, the measured surface electron energy gap is 1.4eV.

2. **Electron behavior of two - dimensional materials**:
- Explore the electron transport behavior of MoS₂, a two - dimensional material, at the nanoscale, especially under low - temperature and ultra - high - vacuum conditions. This is of great significance for understanding the application of two - dimensional materials in future micro - and nano - electronic devices.

3. **Effect of probe spacing on resistance**:
- Study the variation law of the two - probe resistance (R_2P) on the MoS₂ surface at different probe spacings (from tens of nanometers to several micrometers). The results show that as the probe spacing decreases, the resistance exhibits the characteristics of a two - dimensional conduction mechanism.

4. **Surface states and band - bending effects**:
- Analyze the influence of the band - bending effect caused by the approach of a metal probe to the MoS₂ surface on the electron transport properties. The experiment found that when the probe spacing is small, the overlap of surface states leads to a weakening of the band - bending effect, thus affecting the measured value of the surface electron energy gap.

5. **Possibility of constructing atomic - scale circuits**:
- Explore the feasibility of constructing atomic - scale circuits using the MoS₂ surface. Research shows that even in the presence of metal contacts at the nanoscale, the MoS₂ surface still maintains a large electron energy gap, which provides a theoretical basis for constructing atomic - scale logic circuits in the future.

### Summary

This paper, through precisely controlling the probe spacing and I - V measurements under low - temperature conditions, has intensively studied the electron transport properties on the MoS₂ surface, revealed its unique electron behavior at the nanoscale, and provided important experimental data and theoretical support for further developing micro - and nano - electronic devices based on MoS₂.