Abstract:Electrostatically defined nanoscale devices within 2D semiconductor heterostructures, especially van der Waals heterostructures, offer advantages such as uniformity and flexibility. Investigating MoS2/WSe2 heterostructures under split gate and middle gate control unveils unique electronic behavior, highlighting quantum confinement and precise electrostatic control, and advancing the understanding of 2D materials for future electronic devices. The exponential development in quantum phenomena is directly correlated with the decreasing size of nano‐semiconductor transistors. Consequently, the use of a quantum structure that deviates from traditional transistor types becomes imperative. Electrostatically defined nanoscale devices within 2D semiconductor heterostructures serve as foundational elements for diverse quantum electrical circuits. Van der Waals heterostructures, distinguished by atomically flat interfaces and inherent 2D characteristics, offer advantages such as large‐scale uniformity, flexibility, and portability over conventional bulk semiconductor heterostructures. Herein, the intricate electronic behavior of a MoS2/WSe2 encapsulated heterostructure governed by split‐gate and middle‐gate configurations is investigated, revealing a distinctive step‐like current profile at a low temperature of 77 K. The observed four regimes in the current highlight the impact of quantum confinement induced by reduced lateral dimensions, coupled with precise electrostatic confinement controlled by gate voltages. The temperature dependence of the phenomena emphasizes the role of thermal effects on carrier scattering mechanisms. In addition, the pinch‐off characteristics with different temperatures, middle‐gate voltages, and drain biases are explored. This study contributes to a deeper understanding of electrostatic effects in 2D transition metal dichalcogenide heterostructures and holds promise for the development of advanced electronic devices with tailored confinement for enhanced functionalities.

Low Temperature Nanoscale Electronic Transport on the MoS_2 surface

Two-dimensional electronic transport and surface electron accumulation in MoS2

Multi-terminal electrical transport measurements of molybdenum disulphide using van der Waals heterostructure device platform

Multi-terminal Transport Measurements of MoS2 Using a Van Der Waals Heterostructure Device Platform.

Low Temperature Carrier Transport Study of Monolayer MoS2 Field Effect Transistors Prepared by Chemical Vapor Deposition under an Atmospheric Pressure

Coulomb blockade in monolayer MoS2 single electron transistor.

Metal-insulator crossover in monolayer MoS 2

Magneto-transport in MoS2: Phase Coherence, Spin-Orbit Scattering, and the Hall Factor.

Resistivity of Nano-Devices Based on MoS2 in Low Temperature

Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform

Investigation on Mobility of Single-Layer Mos2 at Low Temperature

High field-effect performance and intrinsic scattering in the two-dimensional MoS2 semiconductors

Low-Temperature Ohmic Contact to Monolayer MoS2 by van der Waals Bonded Co/h-BN Electrodes

Exploring Electrostatic Confinement Transport in MoS2/WSe2 Heterostructure via Triple‐Gated Point Contact Device

Low Contact Resistance on Monolayer MoS2 Field-Effect Transistors Achieved by CMOS-Compatible Metal Contacts

The Hot Carrier Diffusion Coefficient of Sub-10 Nm Virgin MoS2: Uncovered by Non-Contact Optical Probing

Studying thermal transport in suspended monolayer molybdenum disulfide prepared by a nano-manipulator-assisted transfer method

Impurities and Electronic Property Variations of Natural MoS2Crystal Surfaces

Weak Distance Dependence of Hot-Electron-Transfer Rates at the Interface between Monolayer MoS<sub>2</sub> and Gold

Nanoscale Adhesion and Material Transfer at 2D MoS 2 -MoS 2 Interfaces Elucidated by In Situ Transmission Electron Microscopy and Atomistic Simulations

Lithography-free Electrical Transport Measurements on 2D Materials by Direct Microprobing