Abstract:Transition metal dichalcogenides (TMDs) are layered semiconducting van der Waal crystals and promising materials for a wide range of electronic and optoelectronic devices. Realizing practical electrical and optoelectronic device applications requires a connection between a metal junction and a TMD semiconductor. Hence, a complete understanding of electronic band alignments and the potential barrier heights governing the transport through a metal-TMD-metal junction is critical. But, there is a knowledge gap; it is not clear how the energy bands of a TMD align while in contact with a metal as a function of the number of layers. In pursuit of removing this knowledge gap, we have performed conductive atomic force microscopy (CAFM) of few layered (1-5) MoS2 immobilized on ultra-flat conducting Au surfaces (root mean square (RMS) surface roughness <0.2 nm) and indium tin oxide (ITO) substrate (RMS surface roughness <0.7 nm) forming a vertical metal (conductive-AFM tip)-semiconductor-metal device. We have observed that the current increases as the number of layers increases up to 5 layers. By applying Fowler-Nordheim tunneling theory, we have determined the barrier heights for different layers and observed that the barrier height decreases as the number of layers increases. Using density functional theory (DFT) calculation, we successfully demonstrated that the barrier height decreases as the layer number increases. By illuminating the TMDs on a transparent ultra-flat conducting ITO substrate, we observed a reduction in current when compared to the current measured in the dark, hence demonstrating negative photoconductivity. Our study provides a fundamental understanding of the local electronic and optoelectronic behaviors of TMD-metal junction, and may pave an avenue toward developing nanoscale electronic devices with tailored layer-dependent transport properties.

Probing the Electronic and Opto-Electronic Properties of Multilayer MoS2 Field-Effect Transistors at Low Temperatures

A fast 2D MoS2 photodetector with ultralow contact resistance

Semimetal-Monolayer Transition Metal Dichalcogenides Photodetectors for Wafer-Scale Ultraviolet Photonics

Low Temperature Carrier Transport Study of Monolayer MoS2 Field Effect Transistors Prepared by Chemical Vapor Deposition under an Atmospheric Pressure

Tune the electronic structure of MoS<sub>2</sub> homojunction for broadband photodetection

Transport Properties of MoO&lt;sub&gt;3&lt;/sub&gt; Contacted Few-Layer MoS&lt;sub&gt;2&lt;/sub&gt; N-type Field-Effect Transistor

Ultrafast Intrinsic Photoresponse and Direct Evidence of Sub-gap States in Liquid Phase Exfoliated MoS2Thin Films

The Photodetectors Based on Lateral Monolayer MoS2/WS2 Heterojunctions

Giant persistent photoconductivity in monolayer MoS2 field-effect transistors

High-Performance Photodetectors Based on Lateral Monolayer MoS2/WS2 Heterojunctions

High Performance Optoelectronics Based on CVD MoS2

The Photodetectors Based on Lateral Monolayer MoS2/WS2 Heterojunctions.

Femtosecond Laser Irradiation-Mediated MoS2-Metal Contact Engineering for High-Performance Field-Effect Transistors and Photodetectors.

Van der Waals Coupled Organic Molecules with Monolayer MoS 2 for Fast Response Photodetectors with Gate-Tunable Responsivity.

A Gate-Free MoS2 Phototransistor Assisted by Ferroelectrics

Femtosecond Laser Irradiation-Mediated MoS 2 –Metal Contact Engineering for High-Performance Field-Effect Transistors and Photodetectors

Layer Dependent Interfacial Transport and Optoelectrical Properties of MoS2 on Ultra-flat Metals

Broadband MoS2 Field‐Effect Phototransistors: Ultrasensitive Visible‐Light Photoresponse and Negative Infrared Photoresponse

Low Temperature Electrical and Photo-Responsive Properties of Mose2

Transport Properties Of Moo3 Contacted Few-Layer Mos2 N-Type Field-Effect Transistor

The Electrical Performances of Monolayer MoS2-based Transistors under Ultra- Low Temperature