Abstract:$\mathrm{MoS_2}$ is an emergent van der Waals material that shows promising prospects in semiconductor industry and optoelectronic applications. However, its electronic properties are not yet fully understood. In particular, the nature of the insulating state at low carrier density deserves further investigation, as it is important for fundamental research and applications. In this study, we investigate the insulating state of a dual-gated exfoliated bilayer $\mathrm{MoS_2}$ field-effect transistor by performing magnetotransport experiments. We observe positive and non-saturating magnetoresistance, in a regime where only one band contributes to electron transport. At low electron density ($\sim 1.4\times 10^{12}~\mathrm{cm^{-2}}$) and a perpendicular magnetic field of 7 Tesla, the resistance exceeds by more than one order of magnitude the zero field resistance and exponentially drops with increasing temperature. We attribute this observation to strong electron localization. Both temperature and magnetic field dependence can, at least qualitatively, be described by the Efros-Shklovskii law, predicting the formation of a Coulomb gap in the density of states due to Coulomb interactions. However, the localization length obtained from fitting the temperature dependence exceeds by more than one order of magnitude the one obtained from the magnetic field dependence. We attribute this discrepancy to the presence of a nearby metallic gate, which provides electrostatic screening and thus reduces long-range Coulomb interactions. The result of our study suggests that the insulating state of $\mathrm{MoS_2}$ originates from a combination of disorder-driven electron localization and Coulomb interactions.

Evidence of the Coulomb gap in the density of states of MoS$_2$

Magneto-transport in MoS2: Phase Coherence, Spin-Orbit Scattering, and the Hall Factor.

Metal-insulator crossover in monolayer MoS 2

Coulomb blockade in monolayer MoS2 single electron transistor.

Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS2 in the Presence of Defects, Strain, and Charged Impurities

Large conduction band and Fermi velocity spin splittings due to Coulomb interactions in single-layer MoS_{2}

Bandgap and doping effects in MoS2 measured by Scanning Tunneling Microscopy and Spectroscopy

Band tail interface states and quantum capacitance in a monolayer molybdenum disulfide field-effect-transistor

Mobility engineering and metal-insulator transition in monolayer MoS2

A field-effect approach to directly profiling the localized states in monolayer MoS 2 .

Evidence of a Coulomb-Interaction-Induced Lifshitz Transition and Robust Hybrid Weyl Semimetal in T-d-MoTe2

Charge Transport and Quantum Confinement in MoS2dual-gated Transistors

Electron transport through the multiple sulfur vacancies in MoS2

Coherence and Density Dynamics of Excitons in a Single-Layer MoS2 Reaching the Homogeneous Limit.

Broadband Optical Properties of Large-Area Monolayer CVD Molybdenum Disulfide

Charge density waves in electron-doped molybdenum disulfide

Low Temperature Nanoscale Electronic Transport on the MoS_2 surface

Strong dopant dependence of electric transport in ion-gated MoS2

Multi-terminal electrical transport measurements of molybdenum disulphide using van der Waals heterostructure device platform

Electronic Properties of Mos2 Sandwiched Between Graphene Monolayers

Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric