Abstract:The fine tuning of electro optic properties is critical for high performing technologies. This is now obtainable with advanced nanostructures, particularly 2D monolayer materials such as molybdenum disulfide (MoS2). Using spin-polarized periodic density functional theory (DFT), we find the direct band gap (K→K') can be chemically tuned with covalently bound functional groups. With an electron withdrawing group such as fluorine, we observe one occupied α and one unoccupied β bands, which correspond to the addition of an α electron and a β hole; confirmed with the spin difference (Qα-Qβ) being 1. By increasing the electron donating behavior with replacement of F by H and then by Me, the occupied (valence) α band shifts upwards in energy relative to the Fermi energy, and the unoccupied β shifts down until they are in contact with the Fermi energy. In addition, both the α and β unoccupied (conduction) bands of the MoS2 shift down, relative to the Fermi energy, until in contact with the Fermi and the system can be described as metallic. The MoS2+F system is thus a small gap semiconductor (0.96 eV), and the MoS2+H and MoS2+Me gaps are 0.21 eV and 0 eV (metallic), respectively. Spin density calculations illustrate the semi localized nature of the α spin, however this is not formed from the radical of the functionalizing group, but rather, the resulting unpaired electron is on the sulfur atom after radical abstraction to form a covalent bond with the group. 5 and 6 membered heterocycles were studied and further confirm these observations. Distinct from typical functional groups such as phenyl, we find evidence for the covalent bonding of pyrrole, cyclopentadiene and pyridine to a sulfur atom of the MoS2 surface, from the new α and β bands in the band structure. The charge carrier nature of the 2D monolayers of functionalized MoS2 can be further tuned with charge doping (hole or electron), such that even the metallic systems can be returned to semiconducting states, but importantly, as p type conductors. Semi localization of the spin states and control of the band gap can be generalized to other covalently functionalized 2D materials and appears suitable for electronics applications, such as photoluminescence devices, contact-free transistors and quantum communication.

Large conduction band and Fermi velocity spin splittings due to Coulomb interactions in single-layer MoS_{2}

Resolving the spin splitting in the conduction band of monolayer MoS2

Spin-orbit proximity in MoS 2 /bilayer graphene heterostructures

On Valence-Band Splitting in Layered MoS2

Spin- and valley-dependent magneto-optical properties of MoS2

Large Magnetoresistance and Non-Zero Berry Phase in the Nodal-Line Semimetal MoO2

Spin-orbit proximity in MoS$_2$/bilayer graphene heterostructures

Evidence of the Coulomb gap in the density of states of MoS$_2$

Optically discriminating carrier-induced quasiparticle band gap and exciton energy renormalization in monolayer MoS2

Spin-valley-polarized Weiss oscillations in monolayer 1{\it T}$^{\prime}$-\ce{MoS2}

Quantum confined Stark effect in a MoS$_2$ monolayer van der Waals heterostructure

Exchange-enhanced spin-orbit splitting and its density dependence for electrons in monolayer transition metal dichalcogenides

Control of Charge Carriers and Band Structure in 2D Monolayer Molybdenum Disulfide via Covalent Functionalization.

Addressing the spin-valley flavors in moir'e mini-bands of MoS2

Valley Zeeman effect and spin-valley polarized conductance in monolayer MoS$_2$ in a perpendicular magnetic field

Giant Bandgap Renormalization and Excitonic Effects in A Monolayer Transition Metal Dichalcogenide Semiconductor

Many-body effect in optical properties of monolayer molybdenum diselenide

Metal-insulator crossover in monolayer MoS 2

Interplay between spin proximity effect and charge-dependent exciton dynamics in MoSe2/CrBr3 van der Waals heterostructures

Vibrational and optical properties of MoS2: From monolayer to bulk

Temperature dependent excitonic effects in the optical properties of single-layer MoS$_2$