Abstract:Multilayered van der Waals heterostructures based on transition metal dichalcogenides are suitable platforms on which to study interlayer (dipolar) excitons, in which electrons and holes are localized in different layers. Interestingly, these excitonic complexes exhibit pronounced valley Zeeman signatures, but how their spin-valley physics can be further altered due to external parameters-such as electric field and interlayer separation-remains largely unexplored. Here, we perform a systematic analysis of the spin-valley physics in MoSe2/WSe2 heterobilayers under the influence of an external electric field and changes of the interlayer separation. In particular, we analyze the spin (Sz) and orbital (Lz) degrees of freedom, and the symmetry properties of the relevant band edges (at K, Q, and Γ points) of high-symmetry stackings at 0° (R-type) and 60° (H-type) angles-the important building blocks present in moiré or atomically reconstructed structures. We reveal distinct hybridization signatures on the spin and the orbital degrees of freedom of low-energy bands, due to the wave function mixing between the layers, which are stacking-dependent, and can be further modified by electric field and interlayer distance variation. We find that H-type stackings favor large changes in the g-factors as a function of the electric field, e.g., from -5 to 3 in the valence bands of the Hhh stacking, because of the opposite orientation of Sz and Lz of the individual monolayers. For the low-energy dipolar excitons (direct and indirect in k-space), we quantify the electric dipole moments and polarizabilities, reflecting the layer delocalization of the constituent bands. Furthermore, our results show that direct dipolar excitons carry a robust valley Zeeman effect nearly independent of the electric field, but tunable by the interlayer distance, which can be rendered experimentally accessible via applied external pressure. For the momentum-indirect dipolar excitons, our symmetry analysis indicates that phonon-mediated optical processes can easily take place. In particular, for the indirect excitons with conduction bands at the Q point for H-type stackings, we find marked variations of the valley Zeeman (∼4) as a function of the electric field, which notably stands out from the other dipolar exciton species. Our analysis suggests that stronger signatures of the coupled spin-valley physics are favored in H-type stackings, which can be experimentally investigated in samples with twist angle close to 60°. In summary, our study provides fundamental microscopic insights into the spin-valley physics of van der Waals heterostructures, which are relevant to understanding the valley Zeeman splitting of dipolar excitonic complexes, and also intralayer excitons.

Valley Zeeman effect and spin-valley polarized conductance in monolayer MoS$_2$ in a perpendicular magnetic field

Spin-valley-polarized Weiss oscillations in monolayer 1{\it T}$^{\prime}$-\ce{MoS2}

Valley polarized current and resonant electronic transport in a non-uniform $\mathbf{MoS}_2$ zigzag nanoribbon

Electronic structure, magnetoexcitons and valley polarized electron gas in 2D crystals

Giant paramagnetism induced valley polarization of electrons in charge-tunable monolayer MoSe2

Novel valley depolarization dynamics and valley Hall effect of exciton in mono- and bilayer MoS$_2$

Valley Spin-Polarization of MoS2 Monolayer Induced by Ferromagnetic Order in an Antiferromagnet

Enhancing valley polarization of a MoS 2 zigzag nanoribbon using double magnetic barriers

Imaging the valley and orbital Hall effect in monolayer MoS2

Valley Hall effect in disordered monolayer MoS2 from first principles

Signatures of Electric Field and Layer Separation Effects on the Spin-Valley Physics of MoSe2/WSe2 Heterobilayers: From Energy Bands to Dipolar Excitons

Resolving the spin splitting in the conduction band of monolayer MoS2

Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides

Zeeman splitting via spin-valley-layer coupling in bilayer MoTe2

Enhanced Spin Polarization and Valley Polarization in Monolayer MoS2 Junctions.

Valley-spin polarization at zero magnetic field induced by strong hole-hole interactions in monolayer WSe$_2$

Spin-Valley Locking Effect in Defect States of Monolayer MoS2

Spin- and valley-dependent magneto-optical properties of MoS2

Induced valley and spin splitting in monolayer MoS2 by interfacial magnetic proximity of half-Heusler LiBeN substrate

Large Valley Polarization In Monolayer Mote2 On A Magnetic Substrate

Enhanced Valley Zeeman Splitting in Fe-Doped Monolayer MoS2