Abstract:The transition metal dichalcogenides (MoS 2 etc.) are a new class of layered materials that can be prepared in variable layer thickness down to single molecular layer. Compared with the more well‐known graphene, the monolayer version of graphite, the transition metal dichalcogenides are semiconductors and hence can be more useful in applications such as light emission or photovoltaics where an energy gap is essential. Ultra thin transition metal dichalcogenides also show interesting layer thickness dependent physical properties. For example, the semiconductor gap was found to change from indirect to direct when the layer thickness is reduced to monolayer, making monolayer MoS 2 an efficient light emitter. Here we present investigation of the dimensionality of the joint density of states involved in the interband transition in MoS 2 using angle resolved as well as angle integrated electron energy loss spectroscopy [1]. To aid the analysis, we have extended the theory of joint density of states from three‐dimensional semiconductors to low‐dimensional semiconductors. Our result and analysis shows not only that the character of the interband transition changes from indirect to direct, as the layer thickness is reduced down to monolayer, as expected, but the indirect band gap retains a three dimensional character down to the monolayer limit. This is compared with the two dimensional character found for the direct bandgap transition in the monolayer MoSe and presumably also in MoS 2. This raised a question about the condition for observing a true two dimensional electronic structrue even when the atomic structure is reduced to single molecular thickness. We will discuss physical factors might affecting the dimensionality of the electronic density‐of‐states. Our result has practical implication. For example, it is consistent with the assumption made by Castellanos‐Gomez et al. [2] when interpreting the electrostatic screening effect observed in monolayer MoS 2 , which is very different from that of graphene. Our result also can explain the sensitivity of the indirect interband transition as a function of the layer thickness and the bandgap cross‐over of few layer MoS 2 from indirect to direct.

On Valence-Band Splitting in Layered MoS2

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Is the electronic structure of few layer transition metal dichalcogenides always two dimensional ?

Interlayer Couplings, Moiré Patterns, and 2D Electronic Superlattices in MoS 2 /wse 2 Hetero-Bilayers

Tuning Band Gaps in Twisted Bilayer MoS_2

Tuning Flat Bands by Interlayer Interaction, Spin-Orbital Coupling, and External Fields in Twisted Homotrilayer MoS_2

Electronic Structure, Spin-Orbit Coupling, and Interlayer Interaction in Bulkmos2andws2

Optically Probing the Asymmetric Interlayer Coupling in Rhombohedral-Stacked MoS2 Bilayer

Probing quantum confinement effects on the excitonic property and electronic band structures of MoS<sub>2</sub>

Electric Field Modulation of the Band Structure in MoS2/WS2 Van Der Waals Heterostructure

Superior Electronic Structure in Two-Dimensional MnPSe 3 /mos2 Van Der Waals Heterostructures

Probing the Role of Interlayer Coupling and Coulomb Interactions on Electronic Structure in Few-Layer MoSe2 Nanostructures

Tuning flat bands by interlayer interaction, spin-orbital coupling, and external fields in twisted homotrilayer MoS$_2$

Layer-Dependent Anisotropic Electronic Structure Of Freestanding Quasi-Two-Dimensional Mos2

Layer-Dependent Valley Depolarization and Raman Phonon Softening of SnS 2 /MoS 2 Vertical van der Waals Heterostructures

Observation of interlayer phonon modes in van der Waals heterostructures

Band energy landscapes in twisted homobilayers of transition metal dichalcogenides

Quantifying van der Waals Interactions in Layered Transition Metal Dichalcogenides from Pressure-Enhanced Valence Band Splitting

Visualizing Band Offsets and Edge States in Bilayer-Monolayer Transition Metal Dichalcogenides Lateral Heterojunction

Resolving the spin splitting in the conduction band of monolayer MoS2

van der Waals trilayers and superlattices: modification of electronic structures of MoS2 by intercalation