Abstract:Recently emerging large-area single-layer MoS2 grown by chemical vapor deposition has triggered great interest due to its exciting potential for applications in advanced electronic and optoelectronic devices. Unlike gapless graphene, MoS2 has an intrinsic band gap in the visible which crosses over from an indirect to a direct gap when reduced to a single atomic layer. In this paper, we report a comprehensive study of fundamental optical properties of MoS2 revealed by optical spectroscopy of Raman, photoluminescence, and vacuum ultraviolet spectroscopic ellipsometry. A band gap of 1.42 eV is determined by the absorption threshold of bulk MoS2 that shifts to 1.83 eV in monolayer MoS2. We extracted the high precision dielectric function up to 9.0 eV, which leads to the identification of many unique interband transitions at high symmetry points in the MoS2 momentum space. The positions of the so-called A and B excitons in single layers are found to shift upwards in energy compared with those of the bulk form and have smaller separation because of the decreased interactions between the layers. A very strong optical critical point predicted to correspond to a quasiparticle gap is observed at 2.86 eV, which is attributed to optical transitions along the parallel bands between the M and Gamma points in the reduced Brillouin zone. The absence of the bulk MoS2 spin-orbit interaction peak at similar to 3.0 eV in monolayer MoS2 is, as predicted, the consequence of the coalescence of nearby excitons. A higher energy optical transition at 3.98 eV, commonly occurring in bulk semiconductors, is associated with a combination of several critical points. Additionally, extending into the vacuum ultraviolet energy spectrum are a series of newly observed oscillations representing optical transitions from valence bands to higher conduction bands of the monolayer MoS2 complex band structure. These optical transitions herein reported enhance our understanding of monolayer MoS2 as well as of two-dimensional systems in general and thus provide informative guidelines for MoS2 optical device designs and theoretical considerations.

Probing quantum confinement effects on the excitonic property and electronic band structures of MoS<sub>2</sub>

Pressure confinement effect in MoS2 monolayers.

Evaluating the Quantum Confinement Effects Modulating Exciton and Electronic Band Structures of Two-Dimensional Layered MoSSe Films and Their Photodetection Potentials

Dependence of Electronic and Optical Properties of MoS2 Multilayers on the Interlayer Coupling and Van Hove Singularity.

Optically discriminating carrier-induced quasiparticle band gap and exciton energy renormalization in monolayer MoS2

Electronic and optical properties of single-layer MoS 2

Probing angle-resolved reflection signatures of intralayer and interlayer excitons in monolayer and bilayer MoS2

Complex Optical Conductivity of Two-Dimensional MoS2: A Striking Layer Dependency

Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS2 in the Presence of Defects, Strain, and Charged Impurities

Quasiparticle Band Structures And Optical Properties Of Strained Monolayer Mos2 And Ws2

Probing Spin-Orbit Coupling and Interlayer Coupling in Atomically Thin Molybdenum Disulfide Using Hydrostatic Pressure.

Vibrational and optical properties of MoS2: From monolayer to bulk

Broadband Optical Properties Of Large-Area Monolayer Cvd Molybdenum Disulfide

Broad Band Optical Properties of Large Area Monolayer CVD Molybdenum Disulfide

Optical investigation of the natural electron doping in thin MoS2 films deposited on dielectric substrates

On Valence-Band Splitting in Layered MoS2

Layer-Dependent Anisotropic Electronic Structure Of Freestanding Quasi-Two-Dimensional Mos2

Electronic Structure and Exciton Shifts in Sb-doped MoS2 Monolayer

Probing the Optical Properties of MoS2 on SiO2/Si and Sapphire Substrates

Many-body effect in optical properties of monolayer molybdenum diselenide

Quantum confined Stark effect in a MoS$_2$ monolayer van der Waals heterostructure