Abstract:A novel 2D semiconductor, MoSi2N4 monolayer, was very recently successfully fabricated and shown great potential for future broad applications in nanoelectronic devices and catalysis. For the synthesis and application of the material, intrinsic point defects are required to be considered, because they are inevitably formed during the bottom-up synthesis and following substrate transfer process, and also can be intentionally introduced by defect engineering to modulate properties and explore applications of materials. Herein, eight types of intrinsic point defects including two vacancies (N mono- and di-vacancies; VN(m) and VN2(m)), four antisites (SiMo, SiN(t), MoN(m) and MoSi) and two adatoms (Siada and Nada) are found to have highly thermodynamic stabilities in MoSi2N4 monolayer under various chemical environments. Electronic properties calculations suggest the existence of VN(m) and VN2(m) leads to the emergence of the recombination center, reducing the carrier lifetime and thus showing the potential for high-speed switching device applications. SiN(t) and Siada-defected structures show p-type and n-type conducting characters, respectively, which can be explored for possible PN junction applications. Also, the existence of MoSi may induce unusual resistance–temperature dependence behavior, providing some chances to design high-mobility semiconductors. Combined with the migration behavior of point defects (monovacancies and adatoms), the Schottky defect formation mechanism of VN(m) could be reasonably explained. Besides, high migration barriers of monovacancy defects (VN(m), VSi and VMo) demonstrate their higher kinetic stability in monolayer, compared with monovacancies in graphene and silicene. The migration of N adatom is relatively difficult than that of Si adatom, increasing opportunities to detect it in experiments. This work will provide insight into defect engineering of MoSi2N4 monolayer and the MA2Z4 monolayer family for various applications.

Electronic Properties and Quasi-Particle Model of Monolayer MoSi_2N_4

Structure and Electronic Properties of MoSi2P4 Monolayer

Prediction of protected band edge states and dielectric tunable quasiparticle and excitonic properties of monolayer MoSi$_2$N$_4$

Prediction of protected band edge states and dielectric tunable quasiparticle and excitonic properties of monolayer MoSi 2 N 4

Tunable spin polarization and electronic structure of bottom-up synthesized MoSi$_2$N$_4$ materials

Electronic and optical properties of single-layer MoS 2

Adsorption of metal atoms on MoSi2N4 monolayer: A first principles study

Tuning transport coefficients of monolayer $\mathrm{MoSi_2N_4}$ with biaxial strain

Chemical environment dependent Stabilities, electronic properties and diffusions behaviors of intrinsic point defects in novel Two-Dimensional MoSi2N4 monolayer

Electronic Structure and Spin Texture of Mo/N Co-Doped Polar 2D-Sic

Two-dimensional electron gas in MoSi<sub>2</sub>N<sub>4</sub>/VSi<sub>2</sub>N<sub>4</sub> heterojunction from first principles

MoSi2N4: An emerging 2D electronic material with protected band edge states and dielectric tunable quasiparticle and optical properties

Two-Dimensional Electron Gas in MoSi2N4/VSi2N4 Heterojunction by First Principles Calculation

Exciton Spectra and Layer Decomposition in MoSi2N4/WSi2N4 Heterostructures

A generic tight-binding model for monolayer, bilayer and bulk MoS2

High intrinsic lattice thermal conductivity in monolayer MoSi$_2$N$_4$

Biaxial strain modulated electronic structures of layered two-dimensional MoSiGeN4 Rashba systems

Two-dimensional van der Waals electrical contact to monolayer MoSi$_2$N$_4$

Probing quantum confinement effects on the excitonic property and electronic band structures of MoS<sub>2</sub>

Novel Two-Dimensional Layered MoSi2Z4 (Z = P, As): New Promising Optoelectronic Materials

First-principles investigation of two-dimensional iron molybdenum nitride: A double transition-metal cousin of MoSi2N4(MoN) monolayer with distinctive electronic and topological properties