Abstract:Chemical vapor deposition has been most recently employed to fabricate centimeter-scale high-quality single-layer MoSi2N4 (Science; 2020;369; 670). Motivated by this exciting experimental advance, herein we conduct extensive first-principles based simulations to explore the stability, mechanical properties, lattice thermal conductivity, piezoelectric and flexoelectric response, and photocatalytic and electronic features of MA2Z4 (M = Cr, Mo, W; A = Si, Ge; Z = N, P) monolayers. The considered nanosheets are found to exhibit dynamical stability and remarkably high mechanical properties. Moreover, they show diverse electronic properties from antiferromagnetic metal to half metal and to semiconductors with band gaps ranging from 0.31 to 2.57 eV. Among the studied nanosheets, the MoSi2N4 and WSi2N4 monolayers yield appropriate band edge positions, high electron and hole mobilities, and strong visible light absorption, highly promising for applications in optoelectronics and photocatalytic water splitting. The MoSi2N4 and WSi2N4 monolayers are also predicted to show outstandingly high lattice thermal conductivity of 440 and 500 W/mK, respectively. For the first time we show that machine learning interatomic potentials trained over small supercells can be employed to examine the flexoelectric and piezoelectric properties of complex structures. As the most exciting finding, WSi2N4, CrSi2N4 and MoSi2N4 are found to exhibit the highest piezoelectric coefficients, outperforming all other-known 2D materials. Our results highlight that MA2Z4 nanosheets not only undoubtedly outperform the transition metal dichalcogenides family but also can compete with graphene for applications in nanoelectronics, optoelectronic, energy storage/conversion and thermal management systems.

High intrinsic lattice thermal conductivity in monolayer MoSi$_2$N$_4$

High Intrinsic Lattice Thermal Conductivity in Monolayer MoSi_2N_4

High and anomalous thermal conductivity in monolayer MSi$_2$Z$_4$ semiconductors

Monolayer ThSi 2 N 4 : An indirect-gap semiconductor with ultra-high carrier mobility

First-principles prediction of high carrier mobility for β-phase MX2N4 (M = Mo, W; X = Si, Ge) monolayers

Intrinsic Thermal Conductivities of Monolayer Transition Metal Dichalcogenides MX2 (M = Mo, W; X = S, Se, Te)

Lattice Thermal Conductivity of Janus MoSSe and WSSe Monolayers.

Electronic properties and quasiparticle model of monolayer MoSi<sub>2</sub>N<sub>4</sub>

XMoSiN2 (X = S, Se, Te): A Novel 2D Janus Semiconductor with Ultra-High Carrier Mobility and Excellent Thermoelectric Performance

Intrinsically Low Lattice Thermal Conductivity in Layered Mn3Si2Te6

Exceptional piezoelectricity, high thermal conductivity and stiffness and promising photocatalysis in two-dimensional MoSi2N4 family confirmed by first-principles

MoSi2N4 single-layer: a novel two-dimensional material with outstanding mechanical, thermal, electronic, optical, and photocatalytic properties

Outstandingly high thermal conductivity, elastic modulus, carrier mobility and piezoelectricity in two-dimensional semiconducting CrC2N4: A first-principles study

Thermal Conductivity of Monolayer MoS2, MoSe2, and WS2: Interplay of Mass Effect, Interatomic Bonding and Anharmonicity

Theoretical insights into the thermoelectric transport performance of the MoP 2 Ga 2 S 2 monolayer

Unexpected thermal transport properties of MgSiO 3 monolayer at extreme conditions

Exploring the structural stability, electronic and thermal attributes of synthetic 2D materials and their heterostructures

Rattling-like Behavior and Band Convergence Induced Ultra-Low Lattice Thermal Conductivity in MgAl2Te4 Monolayer

Intrinsic Electronic Transport And Thermoelectric Power Factor In N-Type Doped Monolayer Mos2

Lattice Vibrational Modes and Phonon Thermal Conductivity of Monolayer MoS2

Two-dimensional superconducting MoSi2N4(MoN)4n homologous compounds