Abstract:Chemical vapor deposition has been most recently employed to fabricate centimeter-scale high-quality single-layer MoSi2N4 (Science; 2020;369; 670). Motivated by this exciting experimental advance, herein we conduct extensive first-principles based simulations to explore the stability, mechanical properties, lattice thermal conductivity, piezoelectric and flexoelectric response, and photocatalytic and electronic features of MA2Z4 (M = Cr, Mo, W; A = Si, Ge; Z = N, P) monolayers. The considered nanosheets are found to exhibit dynamical stability and remarkably high mechanical properties. Moreover, they show diverse electronic properties from antiferromagnetic metal to half metal and to semiconductors with band gaps ranging from 0.31 to 2.57 eV. Among the studied nanosheets, the MoSi2N4 and WSi2N4 monolayers yield appropriate band edge positions, high electron and hole mobilities, and strong visible light absorption, highly promising for applications in optoelectronics and photocatalytic water splitting. The MoSi2N4 and WSi2N4 monolayers are also predicted to show outstandingly high lattice thermal conductivity of 440 and 500 W/mK, respectively. For the first time we show that machine learning interatomic potentials trained over small supercells can be employed to examine the flexoelectric and piezoelectric properties of complex structures. As the most exciting finding, WSi2N4, CrSi2N4 and MoSi2N4 are found to exhibit the highest piezoelectric coefficients, outperforming all other-known 2D materials. Our results highlight that MA2Z4 nanosheets not only undoubtedly outperform the transition metal dichalcogenides family but also can compete with graphene for applications in nanoelectronics, optoelectronic, energy storage/conversion and thermal management systems.

First-principles prediction of high carrier mobility for β-phase MX2N4 (M = Mo, W; X = Si, Ge) monolayers

Prediction of high carrier mobility for novel Janus Mo8S6Se6 monolayers with different phases: first principles calculations

Monolayer ThSi 2 N 4 : An indirect-gap semiconductor with ultra-high carrier mobility

High intrinsic lattice thermal conductivity in monolayer MoSi$_2$N$_4$

High Intrinsic Lattice Thermal Conductivity in Monolayer MoSi_2N_4

First-principles Study of Carrier Mobility in MX (M=Sn, Pb; X=P, As) Monolayers

First principles prediction of two-dimensional Janus STiXY 2 (X = Si, Ge; Y = N, P, As) materials

First-principles Study of Carrier Mobility and Strain Effect in MX (M=Sn, Pb; X=P, As) Monolayers

A Graphene-Like Mg3N2 Monolayer: High Stability, Desirable Direct Band Gap and Promising Carrier Mobility.

Multiphysics Modeling and Simulation of Carrier Dynamics and Thermal Transport in Monolayer MoS2/WSe2 Heterojunction

First Principles Study of Structural, Vibrational and Electronic Properties of Graphene-Like MX2 (m=mo, Nb, W, Ta; X=S, Se, Te) Monolayers

Two-dimensional MSi2N4 (M = Ge, Sn, and Pb) monolayers: Promising new materials for optoelectronic applications

First-principles study on the electronic structure and catalytic properties of two-dimensional MX2N4 systems (M = Ti, Zr; X = Si, Ge)

Exceptional piezoelectricity, high thermal conductivity and stiffness and promising photocatalysis in two-dimensional MoSi2N4 family confirmed by first-principles

Monolayer 2D semiconducting tellurides for high-mobility electronics

First-Principles Study of Two-Dimensional Mop2si2z2 (Z=N, P, As) Monolayer

Chemical environment dependent Stabilities, electronic properties and diffusions behaviors of intrinsic point defects in novel Two-Dimensional MoSi2N4 monolayer

Predicted septuple-atomic-layer Janus MSiGeN 4 (M = Mo and W) monolayers with Rashba spin splitting and high electron carrier mobilities

Two-Dimensional Si-Ge Monolayers: Stabilities, Structures and Electronic Properties

Outstandingly high thermal conductivity, elastic modulus, carrier mobility and piezoelectricity in two-dimensional semiconducting CrC2N4: A first-principles study

Structure and Electronic Properties of Transition Metal Dichalcogenide Mx2 (M = Mo, W, Nb; X = S, Se) Monolayers with Grain Boundaries