Abstract:Chemical vapor deposition has been most recently employed to fabricate centimeter-scale high-quality single-layer MoSi2N4 (Science; 2020;369; 670). Motivated by this exciting experimental advance, herein we conduct extensive first-principles based simulations to explore the stability, mechanical properties, lattice thermal conductivity, piezoelectric and flexoelectric response, and photocatalytic and electronic features of MA2Z4 (M = Cr, Mo, W; A = Si, Ge; Z = N, P) monolayers. The considered nanosheets are found to exhibit dynamical stability and remarkably high mechanical properties. Moreover, they show diverse electronic properties from antiferromagnetic metal to half metal and to semiconductors with band gaps ranging from 0.31 to 2.57 eV. Among the studied nanosheets, the MoSi2N4 and WSi2N4 monolayers yield appropriate band edge positions, high electron and hole mobilities, and strong visible light absorption, highly promising for applications in optoelectronics and photocatalytic water splitting. The MoSi2N4 and WSi2N4 monolayers are also predicted to show outstandingly high lattice thermal conductivity of 440 and 500 W/mK, respectively. For the first time we show that machine learning interatomic potentials trained over small supercells can be employed to examine the flexoelectric and piezoelectric properties of complex structures. As the most exciting finding, WSi2N4, CrSi2N4 and MoSi2N4 are found to exhibit the highest piezoelectric coefficients, outperforming all other-known 2D materials. Our results highlight that MA2Z4 nanosheets not only undoubtedly outperform the transition metal dichalcogenides family but also can compete with graphene for applications in nanoelectronics, optoelectronic, energy storage/conversion and thermal management systems.

Predicted septuple-atomic-layer Janus MSiGeN 4 (M = Mo and W) monolayers with Rashba spin splitting and high electron carrier mobilities

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Electronic properties and quasiparticle model of monolayer MoSi<sub>2</sub>N<sub>4</sub>

Tunable Electronic Properties of Novel 2D Janus MSiGeN4 (M = Ti, Zr, Hf) Monolayers by Strain and External Electric Field

First-principles prediction of high carrier mobility for β-phase MX2N4 (M = Mo, W; X = Si, Ge) monolayers

Intercalated architecture of MA2Z4 family layered van der Waals materials with emerging topological, magnetic and superconducting properties

Two-dimensional MSi2N4 (M = Ge, Sn, and Pb) monolayers: Promising new materials for optoelectronic applications

Rashba-type spin splitting and transport properties of novel Janus XWGeN2 (X = O, S, Se, Te) monolayers

Spin Hall Effect in the Monolayer Janus Compound MoSSe Enhanced by Rashba Spin-Orbit Coupling

Intrinsic and Anisotropic Rashba Spin Splitting in Janus Transition-Metal Dichalcogenide Monolayers

Prediction of high carrier mobility for novel Janus Mo8S6Se6 monolayers with different phases: first principles calculations

Two-Dimensional Janus Antimony Selenium Telluride with Large Rashba Spin Splitting and High Electron Mobility

Monolayer ThSi 2 N 4 : An indirect-gap semiconductor with ultra-high carrier mobility

Exceptional piezoelectricity, high thermal conductivity and stiffness and promising photocatalysis in two-dimensional MoSi2N4 family confirmed by first-principles

Predicted Janus SnSSe monolayer: a comprehensive first-principle study

Emerging versatile two-dimensional MoSi$_2$N$_4$ family

Prediction of Janus XYSTe (X=Li, Na; Y=Al, Ga, In) monolayers with tunable Rashba effect for spintronic devices

First principles prediction of two-dimensional Janus STiXY 2 (X = Si, Ge; Y = N, P, As) materials

Two-Dimensional MoSi 2 N 4 Family: Progress and Perspectives Form Theory

Room Temperature Bound Excitons and Strain-Tunable Carrier Mobilities in Janus Monolayer Transition-Metal Dichalcogenides.

Novel Two-Dimensional MA2N4 Materials for Photovoltaic and Spintronic Applications