Abstract:Recently, Janus two-dimensional (2D) materials have gained much attention due to their intrinsic vertical dipole. Here, we extensively investigate the electronic and magnetic properties of a new type of two-dimensional graphene-like Janus GaInSeTe monolayer by adopting the first-principles methods based on the density functional theory. It is found that 2D Janus GaInSeTe exhibits high dynamical stability and acts as a direct band gap semiconductor. The novel electronic and magnetic properties of the GaInSeTe nanosheet can be modulated via biaxial strain and atomic-sized structural defects. Specifically, the significant changes of semiconductor-to-metal and direct-to-indirect semiconductor transitions are driven by the biaxial strain. Our results also confirm that different types of single vacancy and multiple vacancy can effectively alter the electronic and magnetic properties of the GaInSeTe monolayer. Depending on the different vacancies, they induce metallic (VGadocumentclass[12pt]{minimal}usepackage{amsmath}usepackage{wasysym}usepackage{amsfonts}usepackage{amssymb}usepackage{amsbsy}usepackage{mathrsfs}usepackage{upgreek}setlength{oddsidemargin}{-69pt}egin{document}$$V_mathrm{Ga}$$end{document} and VIndocumentclass[12pt]{minimal}usepackage{amsmath}usepackage{wasysym}usepackage{amsfonts}usepackage{amssymb}usepackage{amsbsy}usepackage{mathrsfs}usepackage{upgreek}setlength{oddsidemargin}{-69pt}egin{document}$$V_mathrm{In}$$end{document}), direct band-gap semiconductive (VSedocumentclass[12pt]{minimal}usepackage{amsmath}usepackage{wasysym}usepackage{amsfonts}usepackage{amssymb}usepackage{amsbsy}usepackage{mathrsfs}usepackage{upgreek}setlength{oddsidemargin}{-69pt}egin{document}$$_mathrm{Se}$$end{document}, VGaIndocumentclass[12pt]{minimal}usepackage{amsmath}usepackage{wasysym}usepackage{amsfonts}usepackage{amssymb}usepackage{amsbsy}usepackage{mathrsfs}usepackage{upgreek}setlength{oddsidemargin}{-69pt}egin{document}$$V_mathrm{GaIn}$$end{document} and VGaInTeSedocumentclass[12pt]{minimal}usepackage{amsmath}usepackage{wasysym}usepackage{amsfonts}usepackage{amssymb}usepackage{amsbsy}usepackage{mathrsfs}usepackage{upgreek}setlength{oddsidemargin}{-69pt}egin{document}$$V_mathrm{GaInTeSe}$$end{document}) and indirect band-gap semiconductor (VTedocumentclass[12pt]{minimal}usepackage{amsmath}usepackage{wasysym}usepackage{amsfonts}usepackage{amssymb}usepackage{amsbsy}usepackage{mathrsfs}usepackage{upgreek}setlength{oddsidemargin}{-69pt}egin{document}$$V_mathrm{Te}$$end{document}, VTeSedocumentclass[12pt]{minimal}usepackage{amsmath}usepackage{wasysym}usepackage{amsfonts}usepackage{amssymb}usepackage{amsbsy}usepackage{mathrsfs}usepackage{upgreek}setlength{oddsidemargin}{-69pt}egin{document}$$V_mathrm{TeSe}$$end{document}), respectively. It was also found that the inclusion of an In vacancy induces magnetism in the Janus GaInSeTe monolayer. Moreover, results show that the electronic and magnetic properties of Janus GaInSeTe monolayer are significantly modulated by vacancies and the external strains, and it displays varied band gaps of magnetic or nonmagnetic, multiple magnetic moments in semiconducting or metallic structures. These tunable electronic structure and magnetic properties of the Janus GaInSeTe monolayer can be utilized for the development of low-dimensional spintronics devices.Graphical AbstractThe electronic and magnetic properties of a Janus GaInSeTe monolayer are significantly modulated by vacancies and the external strain, and it displays varied magnetic or nonmagnetic band gaps and multiple magnetic moments in semiconducting or metallic structures.

Tunable Electronic Properties of Novel 2D Janus MSiGeN4 (M = Ti, Zr, Hf) Monolayers by Strain and External Electric Field

Strain and electric field induced electronic property modifications in two-dimensional Janus SZrAZ 2 (A = Si, Ge; Z = P, As) monolayers

Strain-induced Semiconductor to Metal Transition in MA2Z4 Bilayers (M = Ti, Cr, Mo; A = Si; Z = N, P)

Adjusting Electronic Properties of Janus SHfAZ2 (A═Si,Ge; Z═N, P, As) via Strain Engineering and an Electric Field

Tuning the electronic structures and transport coefficients of Janus PtSSe monolayer with biaxial strain

Two-dimensional MSi2N4 (M = Ge, Sn, and Pb) monolayers: Promising new materials for optoelectronic applications

First principles prediction of two-dimensional Janus STiXY 2 (X = Si, Ge; Y = N, P, As) materials

First-Principles Study on the Tunable Electronic and Magnetic Properties of a Janus GaInSeTe Nanosheet via Strain and Defect Engineering

Two-Dimensional Ges with Tunable Electronic Properties Via External Electric Field and Strain

Tuning of the electronic and photocatalytic properties of Janus WSiGeZ4 (Z = N, P, and As) monolayers via strain engineering.

Strain tuning of the electronic structure and optical properties of novel Janus MgBrI monolayer: Insights from first-principles calculations

Strain engineering the structures and electronic properties of Janus monolayer transition-metal dichalcogenides

Room Temperature Bound Excitons and Strain-Tunable Carrier Mobilities in Janus Monolayer Transition-Metal Dichalcogenides.

A first-principles prediction of novel Janus ZrGeZ3H (Z = N, P, and As) monolayers: Raman active modes, piezoelectric responses, electronic properties, and carrier mobility

Strain Engineering and Electric Field Tunable Electronic Properties of Janus MoSSe/WX2 (X = S, Se) van der Waals Heterostructures

First-principles study on the electronic structure and catalytic properties of two-dimensional MX2N4 systems (M = Ti, Zr; X = Si, Ge)

The stability and electronic properties of hydrogenated Janus MSiGeZ 4 (M = Sc-Zn, Y–Ag, Hf–Au; Z = N, P) monolayers: A first-principles study

Tuning transport coefficients of monolayer $\mathrm{MoSi_2N_4}$ with biaxial strain

Janus TiSiZ 3 H (Z = N, P, As) monolayers with large out-of-plane piezoelectricity and high electron mobility: first-principles study

Predicted septuple-atomic-layer Janus MSiGeN 4 (M = Mo and W) monolayers with Rashba spin splitting and high electron carrier mobilities

Theoretical Predicted Janus SrAlGaTe4: Effects of Strain and Electric Field and Its Topological Properties