Abstract:Due to their great potential in electronics, optoelectronics and piezoelectronics, Janus transition metal dichalcogenide (TMD) monolayers have attracted increasing research interest, the MoSSe of which with sandwiched S-Mo-Se structure has been synthesized experimentally. In this work, the biaxial strain dependence of electronic structures and transport properties of Janus PtSSe monolayer is systematically investigated by using generalized gradient approximation (GGA) plus spin-orbit coupling (SOC). Calculated results show that SOC has a detrimental effect on power factor of PtSSe monolayer, which can be understood by considering SOC effects on energy bands near the Fermi level. With $a/a_0$ from 0.94 to 1.06, the energy band gap firstly increases, and then decreases, which is due to the position change of conduction band minimum (CBM). It is found that compressive strain can increase the strength of conduction bands convergence by changing relative position of conduction band extrema (CBE), which can enhance n-type $ZT_e$ values. Calculated results show that compressive strain can also induce the flat valence bands around the $\Gamma$ point near the Fermi level, which can lead to high Seebeck coefficient due to large effective masses, giving rise to better p-type $ZT_e$ values. The calculated elastic constants with $a/a_0$ from 0.94 to 1.06 all satisfy the mechanical stability criteria, which proves that the PtSSe monolayer is mechanically stable in the considered strain range. Our works further enrich studies of Janus TMD monolayers, and can motivate farther experimental works.

What problem does this paper attempt to address?

This paper aims to explore the changes in the electronic structure and transport coefficients of the Janus PtSSe monolayer material under biaxial strain. Specifically, the researchers used the method of generalized gradient approximation (GGA) plus spin - orbit coupling (SOC) to systematically analyze the changes in properties such as the band structure, electrical conductivity, and thermoelectric properties of the PtSSe monolayer material under different strain conditions. The main objectives of the study include: 1. **Understanding the influence of strain on the electronic structure**: By changing the strain ratio $ \frac{a}{a_0} $ (from 0.94 to 1.06), the researchers observed that the band gap first increases and then decreases. This is mainly caused by the change in the position of the conduction band minimum (CBM). 2. **Evaluating the role of spin - orbit coupling (SOC)**: The study found that SOC has a negative impact on the power factor of the PtSSe monolayer material, which can be explained by considering the influence of SOC on the bands near the Fermi level. 3. **Exploring the enhancement effect of compressive strain on transport properties**: Compressive strain can change the relative position of the conduction band extremum (CBE), thereby enhancing the n - type thermoelectric properties. At the same time, compressive strain can also produce a flat valence band near the Γ point, resulting in a large effective mass, thereby increasing the Seebeck coefficient and further improving the p - type thermoelectric properties. 4. **Verifying mechanical stability**: The researchers calculated the elastic constants under different strain conditions and proved that the PtSSe monolayer material is mechanically stable within the considered strain range. Through these studies, the authors hope to further enrich the research on Janus transition - metal dichalcogenide (TMD) monolayer materials and inspire more experimental work to synthesize PtSSe monolayer materials to explore their electronic structure and transport properties under strain conditions.

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