Abstract:Two-dimensional metal dichalcogenides have garnered significant interest in the realm of electronic applications on account of their tunable electronic structures and high carrier mobility. Utilizing first-principles calculations and deformation potential (DP) theory, a comprehensive investigation on the electronic, mechanical, and carrier transport properties of 1T-SnS 2 monolayer under strain engineering is investigated in this work. The 1T-SnS 2 monolayer emerges as energetically stable within an applied equal-biaxial strain interval of −8% to 8%, satisfying Born's criterion for the elastic constants and thus manifesting remarkable mechanical stability. The lattice parameter, bond length, bond angle, and bandgap dynamically respond to the applied equal-biaxial strain. The band structure calculated using generalized gradient approximation (GGA) and spin-orbit coupling (SOC) of the 1 T-SnS 2 monolayer demonstrates the characteristic of an indirect bandgap semiconductor, accompanied by tunable bandgap under strain engineering. Additionally, the carrier transport properties of 1T-SnS 2 monolayer under strain engineering are also evaluated on the basis of DP theory, and a pronounced anisotropy is discovered in the effective mass, carrier relaxation time, and carrier mobility along the x - and y -direction. Notably, the application of a strain of −4% and 4% on the 1T-SnS 2 monolayer has resulted in high electron mobility of 6233.21 cm 2 /V·s and hole mobility of 1195.62 cm 2 /V·s. Our present work not only underscores the substantial influence of strain engineering on the electronic, mechanical, and carrier transport properties of 1 T-SnS 2 monolayer but also provides critical insights into the strain-based tuning of two-dimensional metal dichalcogenides for electronics and optoelectronics.

Tailoring the electronic, mechanical, and carrier transport properties of 1T‐SnS 2 monolayer via strain engineering: A first-principles study

Tailoring the Electronic, Mechanical, and Carrier Transport Properties of 1t‐sns2 Monolayer Via Strain Engineering: A First-Principles Study

Tuning the physical properties of ultrathin transition-metal dichalcogenides via strain engineering

Biaxial Tensile Strain Enhances Electron Mobility of Monolayer Transition Metal Dichalcogenides

Improving Thermoelectric Performance of Asymmetrical Janus 1T-Snsse Monolayer by the Synergistic Effect of Band Convergence and Crystal Lattice Softening under Strain Engineering

Widely tunable and anisotropic charge carrier mobility in monolayer tin(II) selenide using biaxial strain: a first-principles study

Carrier mobility tuning of MoS2 by strain engineering in CVD growth process

Strain-induced Electronic Structures, Mechanical Anisotropy, and Piezoelectricity of Transition-Metal Dichalcogenide Monolayer CrS2

Tailoring the structural and electronic properties of graphene-like ZnS monolayer using biaxial strain

Unravelling the Thermoelectric Properties and Suppression of Bipolar Effect under Strain Engineering for the Asymmetric Janus SnSSe and PbSSe Monolayers

Strain-Engineering Tunable Electron Mobility Of Monolayer Iv-V Group Compounds

Strain engineering the structures and electronic properties of Janus monolayer transition-metal dichalcogenides

Direct Band Gap and Anisotropic Transport of ZnSb Monolayers Tuned by Hydrogenation and Strain.

Electronic structure and magnetism manipulation of non-metal-doped monolayer chromium disulfide under strain

First-principles investigation on electronic structure, magnetic states and optical properties of Mn-doped SnS2 monolayer via strain engineering

Strain Modulation of Electronic and Optical Properties of Monolayer MoSi2N4

First-principle studies on the metal/semiconductor properties and strain-tuned electronic structures of SnP3 monolayer

Enhanced Carrier Transport Performance of Monolayer Hafnium Disulphide by Strain Engineering

Strain-Enhanced Mobility of Monolayer MoS2

Strain-tuned mechanical, electronic, and optoelectronic properties of two-dimensional transition metal sulfides ZrS2: a first-principles study