Abstract:The effective control of two-dimensional material magnetism is a frontier research field. In this work, the influences of in-plane biaxial tension strain on the electronic structure, magnetic properties, and Curie temperature of monolayer NbSi2N4 are investigated by first-principles calculations based on density functional theory and Monte Carlo simulations in the frame of the Heisenberg model. We demonstrate that the monolayer NbSi2N4 has favorable dynamic and thermal stability through the phonon spectral calculations and ab initio molecular dynamics simulations. It is found that the intrinsic monolayer NbSi2N4 is a non-magnetic metal, which can be transformed into a ferromagnetic metal by 1.5% tensile strain. The electronic structure analysis of monolayer NbSi2N4 shows that the ferromagnetism induced by tensile strain is caused by traveling electrons. There is a half-full band at the monolayer NbSi2N4 Fermi level, which is mainly contributed by the dz2 orbital of the Nb atom. When there is no additional strain, the band is spin-degenerate. Tensile strain can make this band more localized, which leads to Stoner instability, resulting in the ferromagnetic ordering of monolayer NbSi2N4 traveling electrons. The stability of the ferromagnetic coupling is enhanced with the increase of the strain degree. The calculation results of the magnetic anisotropy energy show that the strain can make the direction of the easy magnetization axis of the monolayer NbSi2N4 reverse from the vertical direction to the in-plane, and then back to the vertical direction. Furthermore, the strain can significantly increase the Curie temperature of monolayer NbSi2N4. The Curie temperature of monolayer NbSi2N4 is 18 K at 2% strain and 87.5 K at 6% strain, which is 386% higher than that at 2% strain. Strain engineering can effectively control the magnetic ground state and Curie temperature of single-layer NbSi2N4. The research results are expected to promote the development of MA2Z4 materials in the field of mechanical sensing device design and low-temperature magnetic refrigeration.

First-principles investigation on electronic structure, magnetic states and optical properties of Mn-doped SnS2 monolayer via strain engineering

Tunable Magnetic Coupling in Mn-doped Monolayer MoS2 under Lattice Strain.

Strain Tunable Magnetic Properties of 3d Transition-Metal Ion Doped Monolayer MoS2: A First-Principles Study

Tailoring the Electronic, Mechanical, and Carrier Transport Properties of 1t‐sns2 Monolayer Via Strain Engineering: A First-Principles Study

First-principles Calculations of the Electronic, Optical Properties and Quantum Capacitance of Mn Doped Sc2CO2 Monolayer under Biaxial Strain

Tailoring the electronic, mechanical, and carrier transport properties of 1T‐SnS 2 monolayer via strain engineering: A first-principles study

First-principles calculations of the electronic, optical properties and quantum capacitance of Mn doped Sc 2 CO 2 monolayer under biaxial strain

Electronic structure and magnetism manipulation of non-metal-doped monolayer chromium disulfide under strain

Modulation of Magnetism in Transition-Metal-doped Monolayer MoS2 by Strain Engineering

Impact of strain on the SOT-driven dynamics of thin film Mn$_3$Sn

Modulating the electronic, magnetic and optical properties of 1T-SnSe2 monolayer by defects: An ab initio study

First Principles Study of Magnetic Transition of Strain Induced Monolayer NbSi2N4

Structure and magnetic properties of Mn-doped SnS2 nanopowders prepared by hydrothermal method

Optoelectronic and Magnetic Properties of Mn-doped and Mn–C Co-Doped Wurtzite ZnS: a First-Principles Study

Modulation of the Electronic Structure and Magnetism Performance of V-doped Monolayer MoS2 by Strain Engineering

Impact of strain on the SOT-driven dynamics of thin film Mn3Sn

Doping-dependent optoelectronic, and magnetic properties of monolayer SnS

First-principles study of magnetic and optical properties in dopant-doped two-dimensional SnS2

Magnetism and Optical Property of Mn-Doped Monolayer CrSi 2 by First-Principle Study

Manipulating the Electronic Structure and Physical Properties in Monolayer Mo2I3Br3via Strain and Doping

Manipulating the electronic structure and physical properties in monolayer Mo2I3Br3 via strain and doping