Abstract:Recently, Janus two-dimensional (2D) materials have gained much attention due to their intrinsic vertical dipole. Here, we extensively investigate the electronic and magnetic properties of a new type of two-dimensional graphene-like Janus GaInSeTe monolayer by adopting the first-principles methods based on the density functional theory. It is found that 2D Janus GaInSeTe exhibits high dynamical stability and acts as a direct band gap semiconductor. The novel electronic and magnetic properties of the GaInSeTe nanosheet can be modulated via biaxial strain and atomic-sized structural defects. Specifically, the significant changes of semiconductor-to-metal and direct-to-indirect semiconductor transitions are driven by the biaxial strain. Our results also confirm that different types of single vacancy and multiple vacancy can effectively alter the electronic and magnetic properties of the GaInSeTe monolayer. Depending on the different vacancies, they induce metallic (VGadocumentclass[12pt]{minimal}usepackage{amsmath}usepackage{wasysym}usepackage{amsfonts}usepackage{amssymb}usepackage{amsbsy}usepackage{mathrsfs}usepackage{upgreek}setlength{oddsidemargin}{-69pt}egin{document}$$V_mathrm{Ga}$$end{document} and VIndocumentclass[12pt]{minimal}usepackage{amsmath}usepackage{wasysym}usepackage{amsfonts}usepackage{amssymb}usepackage{amsbsy}usepackage{mathrsfs}usepackage{upgreek}setlength{oddsidemargin}{-69pt}egin{document}$$V_mathrm{In}$$end{document}), direct band-gap semiconductive (VSedocumentclass[12pt]{minimal}usepackage{amsmath}usepackage{wasysym}usepackage{amsfonts}usepackage{amssymb}usepackage{amsbsy}usepackage{mathrsfs}usepackage{upgreek}setlength{oddsidemargin}{-69pt}egin{document}$$_mathrm{Se}$$end{document}, VGaIndocumentclass[12pt]{minimal}usepackage{amsmath}usepackage{wasysym}usepackage{amsfonts}usepackage{amssymb}usepackage{amsbsy}usepackage{mathrsfs}usepackage{upgreek}setlength{oddsidemargin}{-69pt}egin{document}$$V_mathrm{GaIn}$$end{document} and VGaInTeSedocumentclass[12pt]{minimal}usepackage{amsmath}usepackage{wasysym}usepackage{amsfonts}usepackage{amssymb}usepackage{amsbsy}usepackage{mathrsfs}usepackage{upgreek}setlength{oddsidemargin}{-69pt}egin{document}$$V_mathrm{GaInTeSe}$$end{document}) and indirect band-gap semiconductor (VTedocumentclass[12pt]{minimal}usepackage{amsmath}usepackage{wasysym}usepackage{amsfonts}usepackage{amssymb}usepackage{amsbsy}usepackage{mathrsfs}usepackage{upgreek}setlength{oddsidemargin}{-69pt}egin{document}$$V_mathrm{Te}$$end{document}, VTeSedocumentclass[12pt]{minimal}usepackage{amsmath}usepackage{wasysym}usepackage{amsfonts}usepackage{amssymb}usepackage{amsbsy}usepackage{mathrsfs}usepackage{upgreek}setlength{oddsidemargin}{-69pt}egin{document}$$V_mathrm{TeSe}$$end{document}), respectively. It was also found that the inclusion of an In vacancy induces magnetism in the Janus GaInSeTe monolayer. Moreover, results show that the electronic and magnetic properties of Janus GaInSeTe monolayer are significantly modulated by vacancies and the external strains, and it displays varied band gaps of magnetic or nonmagnetic, multiple magnetic moments in semiconducting or metallic structures. These tunable electronic structure and magnetic properties of the Janus GaInSeTe monolayer can be utilized for the development of low-dimensional spintronics devices.Graphical AbstractThe electronic and magnetic properties of a Janus GaInSeTe monolayer are significantly modulated by vacancies and the external strain, and it displays varied magnetic or nonmagnetic band gaps and multiple magnetic moments in semiconducting or metallic structures.

First-Principles Study on the Tunable Electronic and Magnetic Properties of a Janus GaInSeTe Nanosheet via Strain and Defect Engineering

Tunable Electronic Properties of Novel 2D Janus MSiGeN4 (M = Ti, Zr, Hf) Monolayers by Strain and External Electric Field

Electrically tunable magnetism and unique intralayer charge transfer in Janus monolayer MnSSe for spintronics applications

A First-Principles Investigation on Electronic Structure, Optical and Thermoelectric Properties of Janus In2SeTe Monolayer

A systematic investigation of chromium and vanadium impurities in Janus Ga2SO monolayer towards spintronic applications

First-principles study of mechanical, electronic and optical properties of Janus structure in transition metal dichalcogenides

Tuning the electronic structures and transport coefficients of Janus PtSSe monolayer with biaxial strain

First-principles calculations on the mechanical, electronic, magnetic and optical properties of two-dimensional Janus Cr$_2$TeX (X= P, As, Sb) monolayers

Two-dimensional Janus monolayers with tunable electronic and magnetic properties

High-temperature ferromagnetism and half-metallicity in hole-doped Janus O M 2 S ( M = Ga , In , and Tl ) monolayers

Half‐Metallic Ferromagnetism in 2D Janus Monolayers: Mn2GeX (X = As, Sb)

Electronic structure and magnetic anisotropy response of Janus Monolayer VSeTe

Electronic and magnetic properties of GeS monolayer effected by point defects and doping

First-principles Calculations on the Mechanical, Electronic, Magnetic and Optical Properties of Two-Dimensional Janus Cr_2TeX (X= P, As, Sb) Monolayers

Phonon and electron transport in Janus monolayers based on InSe

Stable Antiferromagnetic Property and Tunable Electronic Structure of Two-Dimensional MnPX3 (X = S and Se) from Pristine Structure to Janus Phase

Strain‐Modulated Ferromagnetism at an Intrinsic van der Waals Heterojunction

Regulated magnetic anisotropy and charge density wave in uniformly fabricated Janus CrTeSe monolayer

Strain-tunable ferromagnetism and skyrmions in two-dimensional Janus Cr2XYTe6 (X, Y = Si, Ge, Sn, and X≠Y) monolayers

Electronic and magnetic properties of Janus ZrSSe monolayer doped with V impurity and VX3(X = C, N, O, and F) clusters

Room Temperature Bound Excitons and Strain-Tunable Carrier Mobilities in Janus Monolayer Transition-Metal Dichalcogenides.