Abstract:Recently, Janus two-dimensional (2D) materials have gained much attention due to their intrinsic vertical dipole. Here, we extensively investigate the electronic and magnetic properties of a new type of two-dimensional graphene-like Janus GaInSeTe monolayer by adopting the first-principles methods based on the density functional theory. It is found that 2D Janus GaInSeTe exhibits high dynamical stability and acts as a direct band gap semiconductor. The novel electronic and magnetic properties of the GaInSeTe nanosheet can be modulated via biaxial strain and atomic-sized structural defects. Specifically, the significant changes of semiconductor-to-metal and direct-to-indirect semiconductor transitions are driven by the biaxial strain. Our results also confirm that different types of single vacancy and multiple vacancy can effectively alter the electronic and magnetic properties of the GaInSeTe monolayer. Depending on the different vacancies, they induce metallic (VGadocumentclass[12pt]{minimal}usepackage{amsmath}usepackage{wasysym}usepackage{amsfonts}usepackage{amssymb}usepackage{amsbsy}usepackage{mathrsfs}usepackage{upgreek}setlength{oddsidemargin}{-69pt}egin{document}$$V_mathrm{Ga}$$end{document} and VIndocumentclass[12pt]{minimal}usepackage{amsmath}usepackage{wasysym}usepackage{amsfonts}usepackage{amssymb}usepackage{amsbsy}usepackage{mathrsfs}usepackage{upgreek}setlength{oddsidemargin}{-69pt}egin{document}$$V_mathrm{In}$$end{document}), direct band-gap semiconductive (VSedocumentclass[12pt]{minimal}usepackage{amsmath}usepackage{wasysym}usepackage{amsfonts}usepackage{amssymb}usepackage{amsbsy}usepackage{mathrsfs}usepackage{upgreek}setlength{oddsidemargin}{-69pt}egin{document}$$_mathrm{Se}$$end{document}, VGaIndocumentclass[12pt]{minimal}usepackage{amsmath}usepackage{wasysym}usepackage{amsfonts}usepackage{amssymb}usepackage{amsbsy}usepackage{mathrsfs}usepackage{upgreek}setlength{oddsidemargin}{-69pt}egin{document}$$V_mathrm{GaIn}$$end{document} and VGaInTeSedocumentclass[12pt]{minimal}usepackage{amsmath}usepackage{wasysym}usepackage{amsfonts}usepackage{amssymb}usepackage{amsbsy}usepackage{mathrsfs}usepackage{upgreek}setlength{oddsidemargin}{-69pt}egin{document}$$V_mathrm{GaInTeSe}$$end{document}) and indirect band-gap semiconductor (VTedocumentclass[12pt]{minimal}usepackage{amsmath}usepackage{wasysym}usepackage{amsfonts}usepackage{amssymb}usepackage{amsbsy}usepackage{mathrsfs}usepackage{upgreek}setlength{oddsidemargin}{-69pt}egin{document}$$V_mathrm{Te}$$end{document}, VTeSedocumentclass[12pt]{minimal}usepackage{amsmath}usepackage{wasysym}usepackage{amsfonts}usepackage{amssymb}usepackage{amsbsy}usepackage{mathrsfs}usepackage{upgreek}setlength{oddsidemargin}{-69pt}egin{document}$$V_mathrm{TeSe}$$end{document}), respectively. It was also found that the inclusion of an In vacancy induces magnetism in the Janus GaInSeTe monolayer. Moreover, results show that the electronic and magnetic properties of Janus GaInSeTe monolayer are significantly modulated by vacancies and the external strains, and it displays varied band gaps of magnetic or nonmagnetic, multiple magnetic moments in semiconducting or metallic structures. These tunable electronic structure and magnetic properties of the Janus GaInSeTe monolayer can be utilized for the development of low-dimensional spintronics devices.Graphical AbstractThe electronic and magnetic properties of a Janus GaInSeTe monolayer are significantly modulated by vacancies and the external strain, and it displays varied magnetic or nonmagnetic band gaps and multiple magnetic moments in semiconducting or metallic structures.

Phonon and electron transport in Janus monolayers based on InSe

Carrier and Phonon Transport in 2D InSe and Its Janus Structures

A First-Principles Investigation on Electronic Structure, Optical and Thermoelectric Properties of Janus In2SeTe Monolayer

Unusual phonon behavior and ultra-low thermal conductance of monolayer InSe.

Ultra-low lattice thermal conductivity induces high-performance thermoelectricity in Janus group-VIA binary monolayers: A comparative investigation

Phonon transport of Janus monolayer MoSSe: a first-principles study

Theoretical investigations of Janus WSeTe monolayer and related van der Waals heterostructures with promising thermoelectric performance

Understanding phonon transport properties on Janus XSSe (X = Hf, Pb, Pt) monolayers via density functional theory

Electronic and thermoelectric properties of Janus AsSeX (X = Cl, Br, I) monolayers: A first-principles study

First-principles Study on the Lattice Thermal Conductivity of Janus In2Ge2Te6 Bilayer

First-Principles Study of the Phonon Lifetime and Low Lattice Thermal Conductivity of Monolayer γ-GeSe: A Comparative Study

First-principles Study of Electronic, Optical and Thermal Transport Properties of Group III–VI Monolayer MX (M = Ga, In; X = S, Se)

Ultrahigh thermoelectric performance of Janus α-STe2 and α-SeTe2 monolayers

Room Temperature Bound Excitons and Strain-Tunable Carrier Mobilities in Janus Monolayer Transition-Metal Dichalcogenides.

First-principles Calculations of MoSeTe/WSeTe Bilayers: Stability, Phonons, Electronic Band Offsets, and Rashba Splitting

Inse Monolayer: Synthesis, Structure And Ultra-High Second-Harmonic Generation

Tl 2 XY (X, Y = S, Se) monolayers with low lattice thermal conductivity and high thermoelectric performance by full-band approach with four scattering mechanisms

Lattice Thermal Conductivity of Janus MoSSe and WSSe Monolayers.

Non-layered InSe nanocrystalline bulk materials with ultra-low thermal conductivity

First-Principles Study on the Tunable Electronic and Magnetic Properties of a Janus GaInSeTe Nanosheet via Strain and Defect Engineering

Novel Janus gamma-Pb XY monolayers with high thermoelectric performance X=S, Se and Y=Se, Te X Y