First-principles Study of Carrier Mobility in MX (M=Sn, Pb; X=P, As) Monolayers

Bo Zhang,Wenhui Wan,Yong Liu,Yanfeng Ge

2024-03-11

Abstract:Compounds from groups IV and V have been the focus of recent research due to their impressive physical characteristics and structural stability. In this study, the MX monolayers (M=Sn, Pb; N=P, As) are investigated with first-principles calculations based on Boltzmann transport theory. The results show that SnP, SnAs, and PbAs all exhibit indirect band gaps, whereas PbP is the only semiconductor with a direct band gap. One important finding is that intravalley scattering has a significant impact on electron-phonon coupling. Interestingly, changes in carrier concentration do not affect the electron mobility within these MX monolayers, with SnP exhibiting the highest electron mobility among them. Subsequently, the SnP under a 6% biaxial strain is further explored and the results demonstrated a considerable increase in electron mobility to 2,511.9 cm^2/Vs, which is attributable to decreased scattering. This suggests that MX monolayers, especially SnP, are promising options for 2D semiconductor materials in the future.

Materials Science

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to explore the carrier mobility in MX (M = Sn, Pb; X = P, As) monolayer materials, and analyze the electronic structures, electron - phonon coupling strengths and carrier mobilities of these materials through first - principles calculations based on Boltzmann transport theory. Specifically: 1. **Research on material properties**: The paper first explores the basic physical properties and structural stabilities of these materials, especially their band structures. It is found that SnP, SnAs and PbAs are all indirect - band - gap semiconductors, while PbP is the only direct - band - gap semiconductor. 2. **Analysis of electron - phonon coupling**: The study points out that inter - valley scattering has a significant impact on electron - phonon coupling. Interestingly, the change in carrier concentration has little effect on the electron mobility in MX monolayer materials, among which SnP exhibits the highest electron mobility. 3. **Influence of strain engineering**: The performance change of SnP under 6% biaxial strain is further studied. The results show that the electron mobility increases significantly to 2,511.9 cm²V⁻¹s⁻¹, which is mainly attributed to the reduction of scattering. 4. **Influence of temperature and carrier concentration**: The paper also analyzes the influence of temperature and carrier concentration on carrier mobility, and finds that as the temperature and carrier concentration increase, the carrier mobility will decrease. Through these studies, the paper provides new insights for the future development of 2D semiconductor materials, especially in the development of high - performance 2D semiconductor devices.

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