Abstract: The interactions between electrons and lattice vibrational modes play the key role in determining the carrier transport properties, thermoelectric performance and other physical quantities related to phonons in semiconductors. However, for two-dimensional (2D) materials, the widely-used models for carrier transport only consider the interactions between electrons and some specific phonon modes, which usually leads to inaccruate predictions of electrons/phonons transport properties. In this work, comprehensive investigations on full electron-phonon couplings and their influences on carrier mobility and thermoelectric performances of 2D group-IV and V elemental monolayers were performed, and we also analyzed in details the selection rules on electron-phonon couplings using group-theory arguments. Our calculations revealed that, for the cases of shallow dopings where only intravalley scatterings are allowed, the contributions from optical phonon modes are significantly larger than those from acoustic phonon modes in group-IV elemental monolayers, and LA and some specific optical phonon modes contribute significantly to the total intravalley scatterings. When the doping increases and intervalley scatterings are allowed, the intervalley scatterings are much stronger than intravalley scatterings, and ZA/TA/LO phonon modes dominate the intervalley scatterings in monolayer Si, Ge and Sn. The dominant contributions to the total intervalley scatterings are ZA/TO in monolayer P, ZA/TO in monolayer As and TO/LO in monolayer Sb. Based on the thorough investigations on the full electron-phonon couplings, we predict accurately the carrier mobilities and thermoelectric figure of merits in these two elemental crystals, and reveal significant reductions when compared with the calculations based on the widely-used simplified model.

First-principles Study of Carrier Mobility and Strain Effect in MX (M=Sn, Pb; X=P, As) Monolayers

First-principles Study of Carrier Mobility in MX (M=Sn, Pb; X=P, As) Monolayers

Electronic, Elastic, Optical and Thermal Transport Properties of Penta-Pdas2 Monolayer: First-principles Study

Tailoring the Electronic, Mechanical, and Carrier Transport Properties of 1t‐sns2 Monolayer Via Strain Engineering: A First-Principles Study

Tailoring the electronic, mechanical, and carrier transport properties of 1T‐SnS 2 monolayer via strain engineering: A first-principles study

First-Principles Calculations of Angular and Strain Dependence on Effective Masses of Two-Dimensional Phosphorene Analogues (Monolayer α-Phase Group-IV Monochalcogenides MX)

Towards Accurate Predictions of Carrier Mobilities and Thermoelectric Performances in 2D Materials

Exploring electronic features in monolayer and bilayer MX 2 (M = Hf, Zr; X = S, Se) structures under shear strain

First-principles prediction of high carrier mobility for β-phase MX2N4 (M = Mo, W; X = Si, Ge) monolayers

Giant anisotropic photogalvanic effect in a flexible AsSb monolayer with ultrahigh carrier mobility.

Mobility Anisotropy of Two-Dimensional Semiconductors

First-Principles Study of Two-Dimensional Mop2si2z2 (Z=N, P, As) Monolayer

Strain and electric field induced electronic property modifications in two-dimensional Janus SZrAZ 2 (A = Si, Ge; Z = P, As) monolayers

Enhanced Carrier Mobility And Direct Tunneling Probability Of Biaxially Strained Ge1-Xsnx Alloys For Field-Effect Transistors Applications

Unravelling the Thermoelectric Properties and Suppression of Bipolar Effect under Strain Engineering for the Asymmetric Janus SnSSe and PbSSe Monolayers

Biaxial Tensile Strain Enhances Electron Mobility of Monolayer Transition Metal Dichalcogenides

The anisotropic ultrahigh hole mobility in strain-engineering two-dimensional penta-SiC$_2$

SiGe/AsSb bilayer heterostructures: structural characteristics and tunable electronic properties

Strain and electric field induced electronic properties of two-dimensional hybrid bilayers of transition-metal dichalcogenides

Strain tunable pudding-mold-type band structure and thermoelectric properties of SnP$_3$ monolayer

The Anisotropic Ultrahigh Hole Mobility in Strain-Engineering Two-Dimensional Penta-Sic_2