Abstract:Two-dimensional (2D) transition-metal dichalcogenides (TMDs) are new crystalline materials with exotic electronic, mechanical, and optical properties. Due to their inherent exceptional mechanical strength, these 2D materials provide us the best platform for strain engineering. In this study, we have performed first-principles calculations to study the effect of uniaxial strains on the electronic, magnetic, and mechanical properties of transition-metal dichalcogenides (TMDs) MX2 (where M = Cr, Mo, W and X = S, Se), monolayers (2D), and armchair and zigzag nanoribbons (1D). For the mechanical strength, we determined the tensile strength (σ) and Young's modulus (Y) and observed that σ and Y are higher in monolayers (most in WS2ML) as compared to nanoribbons where monolayers resist tension up to 25-28% strain while nanoribbons (armchair and zigzag) can be only up to 5-10%. Deformation potential (Δ p ) in the linear regime near the equilibrium position(ϵ < 2%) has also been calculated, and its effect on monolayers is observed less as compared to nanoribbons. In addition, unstrained nonmagnetic monolayers are direct band gap semiconductors (D) which changed to indirect band gap semiconductors (I) with the application of strain. Ferromagnetic states of metallic zigzag nanoribbons (including up spin channel of 7-CrS2NR and 7-CrSe2NR) are greatly affected by strain and show half-metal-like behavior in different strain range. The magnetic moment (μ) that is predominantly observed in zigzag nanoribbons is 2 times higher than that of other nanoribbons. This magnetism in nanoribbons is mostly caused by transition-metal atoms (M = Cr, Mo, W). Thus, our study suggests that strain engineering is the best approach to modify or control the structural, electronic, magnetic, and mechanical properties of the TMD monolayer and nanoribbons which, therefore, open their potential applications in spintronics, photovoltaic cells, and tunneling field-effect transistors.

Strain and electric field induced electronic properties of two-dimensional hybrid bilayers of transition-metal dichalcogenides

Tuning electronic properties in transition metal dichalcogenides MX$_2$ (M= Mo/W, X= S/Se) heterobilayers with strain and twist angle

Electronic Band Gap Tuning and Calculations of Mechanical Strength and Deformation Potential by Applying Uniaxial Strain on MX2 (M = Cr, Mo, W and X = S, Se) Monolayers and Nanoribbons

Strain and electric field tuning the electronic properties of two-dimensional MoS2/ScCl3 van der Waals heterostructure

Strain-induced Semiconductor to Metal Transition in MA2Z4 Bilayers (M = Ti, Cr, Mo; A = Si; Z = N, P)

Biaxial Tensile Strain Enhances Electron Mobility of Monolayer Transition Metal Dichalcogenides

Strain-engineering in two-dimensional transition metal dichalcogenide alloys

Exploring electronic features in monolayer and bilayer MX 2 (M = Hf, Zr; X = S, Se) structures under shear strain

Strain engineering the structures and electronic properties of Janus monolayer transition-metal dichalcogenides

Does an intrinsic strain contribute to the effect of quantum confinement phenomenon? An alloyed transition metal dichalcogenide series, Mo(S1−xSex)2 as a case study

Biaxial strain in atomically thin transition metal dichalcogenides

Tailoring the Electronic, Mechanical, and Carrier Transport Properties of 1t‐sns2 Monolayer Via Strain Engineering: A First-Principles Study

Lateral junctions of transition metal dichalcogenides as ballistic channels for straintronic applications

Emergence of non-uniform strain induced exciton species in homo- and heterobilayer transition metal dichalcogenides

Strain‐Engineered Level Alignment in the MoTe2/WSe2 Heterobilayer

Electronic, optical and transport properties of van der Waals Transition-metal Dichalcogenides Heterostructures: A First-principle Study

Tailoring the electronic, mechanical, and carrier transport properties of 1T‐SnS 2 monolayer via strain engineering: A first-principles study

Strain Induced Modulation of Local Transport of 2D Materials at the Nanoscale

Pressure and electric field-induced metallization in the phase-engineered ZrX2 (X = S, Se, Te) bilayers

Strain-engineering the Schottky barrier and electrical transport on MoS2