Abstract: The interactions between electrons and lattice vibrational modes play the key role in determining the carrier transport properties, thermoelectric performance and other physical quantities related to phonons in semiconductors. However, for two-dimensional (2D) materials, the widely-used models for carrier transport only consider the interactions between electrons and some specific phonon modes, which usually leads to inaccruate predictions of electrons/phonons transport properties. In this work, comprehensive investigations on full electron-phonon couplings and their influences on carrier mobility and thermoelectric performances of 2D group-IV and V elemental monolayers were performed, and we also analyzed in details the selection rules on electron-phonon couplings using group-theory arguments. Our calculations revealed that, for the cases of shallow dopings where only intravalley scatterings are allowed, the contributions from optical phonon modes are significantly larger than those from acoustic phonon modes in group-IV elemental monolayers, and LA and some specific optical phonon modes contribute significantly to the total intravalley scatterings. When the doping increases and intervalley scatterings are allowed, the intervalley scatterings are much stronger than intravalley scatterings, and ZA/TA/LO phonon modes dominate the intervalley scatterings in monolayer Si, Ge and Sn. The dominant contributions to the total intervalley scatterings are ZA/TO in monolayer P, ZA/TO in monolayer As and TO/LO in monolayer Sb. Based on the thorough investigations on the full electron-phonon couplings, we predict accurately the carrier mobilities and thermoelectric figure of merits in these two elemental crystals, and reveal significant reductions when compared with the calculations based on the widely-used simplified model.

Point Defect Limited Carrier Mobility in 2D Transition Metal Dichalcogenides

Atomic Defects in Two‐Dimensional Materials: from Single‐Atom Spectroscopy to Functionalities in Opto‐/Electronics, Nanomagnetism, and Catalysis

Towards Accurate Predictions of Carrier Mobilities and Thermoelectric Performances in 2D Materials

Hopping Transport through Defect-induced Localized States in Molybdenum Disulfide

Hopping Transport Through Defect-Induced Localized States in Molybdenum Disulphide

Native point defects in 2D transition metal dichalcogenides: A perspective bridging intrinsic physical properties and device applications

Two-dimensional Semiconductor Computational Carrier Mobility Genome

Defects as a factor limiting carrier mobility in WSe2: A spectroscopic investigation

Electron Transport and Device Physics in Monolayer Transition-Metal Dichalcogenides

Defects As a Factor Limiting Carrier Mobility in WSe 2 : A Spectroscopic Investigation

Carrier mobilities of Janus transition metal dichalcogenides monolayers studied by Born effective charge and first-principles calculation

Towards Intrinsic Charge Transport in Monolayer Molybdenum Disulfide by Defect and Interface Engineering

Analyzing the Carrier Mobility in Transition-metal Dichalcogenide MoS2 Field-effect Transistors

A Hybrid-DFT Study of Intrinsic Point Defects in $MX_2$ ($M$=Mo, W; $X$=S, Se) Monolayers

Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors

Approaching the Intrinsic Limit in Transition Metal Diselenides via Point Defect Control

Origin of phonon-limited mobility in two-dimensional metal dichalcogenides

Electronic, optical and transport properties of van der Waals Transition-metal Dichalcogenides Heterostructures: A First-principle Study

Theoretical Study of Electronic Transport in Two-Dimensional Transition Metal Dichalcogenides: Effects of the Dielectric Environment

Quantitative Predictions of the Thermal Conductivity in Transition Metal Dichalcogenides: Impact of Point Defects in MoS 2 and WS 2 Monolayers

Electronic Properties of Defective Janus MoSSe Monolayer