Abstract:We discuss the effect of the dielectric environment (insulators and metal gates) on electronic transport in two-dimensional (2D) transition metal dichalcogenides (TMD) monolayers. We employ well-known ab initio methods to calculate the low-field carrier mobility in free-standing layers and use the dielectric continuum approximation to extend our study to layers in double-gate structures, including the effects of dielectric screening of the electron-phonon interaction caused by the bottom oxide and the gate insulator, and of scattering with hybrid interface optical-phonon/plasmon excitations (`remote phonon scattering'). We find that the presence of insulators with a high dielectric constant may improve significantly the carrier mobility. However, scattering with the interface hybrid excitations negates this gain and degrades the mobility significantly below its free-standing value. In a double-gate geometry with SiO$_{2}$ as bottom-oxide and various top-gate insulators, we find that the mobility decreases as the top-insulator dielectric constant increases, as expected. However, a high mobility is predicted in the case of the weakly polar hBN, and a mobility much lower than expected is calculated in the case of gate-insulator/TMD/bottom-oxide stacks in which two or more polar materials have optical-phonon with similar resonating frequencies. We also find that the effect of screening by metal gates is noticeable but not particularly strong. Finally, we discuss the effect of the TMD dielectric constant, of the free-carrier density, and of temperature on the transport properties of TMD monolayers.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: to study the influence of the dielectric environment (including the substrate/bottom oxide layer, gate insulator, and metal gate) on the electron transport properties in two - dimensional transition metal dichalcogenide (TMD) monolayers. Specifically, the author explored how high - dielectric - constant insulators can affect carrier mobility, and the negative impact of interface - mixed optical phonon/plasmon excitation (IPP scattering) on mobility. ### Summary of the main problems in the paper: 1. **Influence of the dielectric environment on electron transport**: - Research shows that high - dielectric - constant insulators can significantly improve carrier mobility, but interface - mixed excitation (IPP scattering) will offset this gain and make the mobility significantly lower than that of the free - standing layer. - In particular, long - wave interactions are strongly influenced by coupling with 2D plasmas at the carrier areal densities of interest. 2. **Influence of different top - gate insulators**: - Considering TMD monolayers in a double - gate structure, using SiO₂ as the bottom oxide layer and different top - gate insulators (such as hBN to ZrO₂), it was found that the mobility decreases as the dielectric constant of the top insulator increases. - Two main deviations were observed: weakly polar hBN exhibits a higher mobility; when there are two or more polar materials with similar resonance frequencies in the stack, the mobility is much lower than expected. 3. **Shielding effect of the metal gate**: - The shielding effect of the metal gate is obvious, but not particularly strong. - The influence of TMD dielectric constant, free - carrier density, and temperature on transport properties was further discussed. 4. **Theoretical models and calculation methods**: - The low - field carrier mobility of the free - standing layer was calculated using the dielectric continuum approximation and the first - principles method (DFT). - The fully hybridized IPP scattering and the shielding effect of the insulator on the 2D phonon scattering intensity were considered. - The low - field mobility was calculated using full - band Monte Carlo simulations. Through these studies, the paper aims to comprehensively understand the influence of the dielectric environment on the electron transport properties of TMD monolayers and provide theoretical guidance for future experiments and applications. ### Examples of formulas involved: - **Dielectric function**: \[ \epsilon_{\text{box}}(\omega)=\epsilon_{\text{box}}^{(\infty)}+\left[\epsilon_{\text{box}}^{(0)}-\epsilon_{\text{box}}^{(\text{mid})}\right]\frac{\omega_{TO,1}^2}{\omega_{TO,1}^2 - \omega^2}+\left[\epsilon_{\text{box}}^{(\text{mid})}-\epsilon_{\text{box}}^{(\infty)}\right]\frac{\omega_{TO,2}^2}{\omega_{TO,2}^2 - \omega^2} \] - **2D plasma dispersion**: \[ \omega_P(Q)^2=\frac{e^2 n Q}{2\epsilon_{2D}^{\infty}m^*} \] - **Poisson Green function**: \[ G_Q(z,z')=\text{In - plane Fourier transform of the Poisson Green's function} \] These formulas show the complexity and multi - faceted influence of electron - phonon interactions in the dielectric environment.

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