Abstract:We present a detailed theoretical investigation on the electronic transport properties of $n$-type monolayer (ML) transition metal dichalcogenides (TMDs) at low temperature in the presence of proximity-induced interactions such as Rashba spin-orbit coupling (RSOC) and the exchange interaction. The electronic band structure is calculated by solving the Schrödinger equation with a $\mathbf{k}\cdot\mathbf{p}$ Hamiltonian, and the electric screening induced by electron-electron interaction is evaluated under a standard random phase approximation approach. In particular, the longitudinal and transverse or Hall mobilities are calculated by using a momentum-balance equation derived from a semi-classical Boltzmann equation, where the electron-impurity interaction is considered as the principal scattering center at low temperature. The obtained results show that the RSOC can induce the in-plane spin components for spin-split subbands in different valleys, while the exchange interaction can lift the energy degeneracy for electrons in different valleys. The opposite signs of Berry curvatures in the two valleys would introduce opposite directions of Lorentz force on valley electrons. As a result, the transverse currents from nondegenerate valleys can no longer be canceled out so that the transverse current or Hall mobility can be observed. Interestingly, we find that at a fixed effective Zeeman field, the lowest spin-split conduction subband in ML-TMDs can be tuned from one in the $K'$-valley to one in the $K$-valley by varying the Rashba parameter. The occupation of electrons in different valleys also varies with changing carrier density. Therefore, we can change the magnitude and direction of the Hall current by varying the Rashba parameter, effective Zeeman field, and carrier density by, e.g., the presence of a ferromagnetic substrate and/or applying a gate voltage.

Longitudinal and transverse mobilities of $n$-type monolayer transition metal dichalcogenides in the presence of proximity-induced interactions at low temperature

Nonlinear Rashba Spin Splitting in Transition Metal Dichalcogenide Monolayers.

Theoretical Study of Electronic Transport in Two-Dimensional Transition Metal Dichalcogenides: Effects of the Dielectric Environment

Optical spectrum of $n$-type and $p$-type monolayer MoS$_2$ in the presence of proximity-induced interactions

Magneto-optical conductivity of monolayer transition metal dichalcogenides in the presence of proximity-induced exchange interaction and external electrical field

Electron Transport and Device Physics in Monolayer Transition-Metal Dichalcogenides

Manipulation Of The Large Rashba Spin Splitting In Polar Two-Dimensional Transition-Metal Dichalcogenides

Signatures of nontrivial Rashba metal states in a transition metal dichalcogenides Josephson junction

Electronic structures, charge transfer and charge orders in twisted transition metal dichalcogenide bilayers

Observation of Valley Zeeman and Quantum Hall Effects at Q Valley of Few-Layer Transition Metal Disulfides

Metal-insulator transition in transition metal dichalcogenide heterobilayer: accurate treatment of interaction

Probing the fractional quantum Hall phases in valley-layer locked bilayer MoS$_{2}$

Intrinsic and Anisotropic Rashba Spin Splitting in Janus Transition-Metal Dichalcogenide Monolayers

Disentangling orbital and valley Hall effects in bilayers of transition metal dichalcogenides

Mobility engineering and metal-insulator transition in monolayer MoS2

Manipulation of the Large Rashba Spin Splitting in Polar Two-Dimensional Transition Metal Dichalcogenides

Interplay of valley polarization and dynamic nuclear polarization in 2D transition metal dichalcogenides

Rich many-body phase diagram of electrons and holes in doped monolayer transition metal dichalcogenides

Even–odd layer-dependent magnetotransport of high-mobility Q-valley electrons in transition metal disulfides

Rydberg excitons and polaritons in monolayer transition metal dichalcogenides in a magnetic field

Metal-Insulator Transition in a Semiconductor Heterobilayer Model