Abstract:Experimental realization of single-layer MoSi2N4 is among the latest groundbreaking advances in the field of two-dimensional (2D) materials. Inspired by this accomplishment, herein we conduct first-principles calculations to explore the stability of MC2N4 (M= Cr, Mo, W, V, Nb, Ta, Ti, Zr, Hf) monolayers. Acquired results confirm the desirable thermal, dynamical and mechanical stability of MC2N4 (M= Cr, Mo, W, V) nanosheets. Interestingly, CrC2N4, MoC2N4 and WC2N4 monolayers are found to be semiconductors with band gaps of 2.32, 2.76 and 2.86 eV, respectively, using the HSE06 functional, whereas VC2N4 lattice shows a metallic nature. The direct gap semiconducting nature of CrC2N4 monolayer results in excellent absorption of visible light. The elastic modulus and tensile strength of CrC2N4 nanosheet are predicted to be remarkably high, 676 and 54.8 GPa, respectively. On the basis of iterative solutions of the Boltzmann transport equation, the room temperature lattice thermal conductivity of CrC2N4 monolayer is predicted to be 350 W/mK, among the highest in 2D semiconductors. CrC2N4 and WC2N4 lattices are also found to exhibit outstandingly high piezoelectric coefficients. This study introduces CrC2N4 nanosheet as a novel 2D semiconductor with outstandingly high mechanical strength, thermal conductivity, carrier mobility and piezoelectric coefficient.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to explore the stability and intrinsic physical properties of a series of two - dimensional (2D) material MC₂N₄ (M = Cr, Mo, W, V, Nb, Ta, Ti, Zr, Hf) monolayer structures. Specifically, the research objectives include: 1. **Structural and Thermodynamic Stability**: Verify the thermodynamic and kinetic stability of these materials through first - principles calculations. 2. **Electronic Properties**: Determine the type of band gap (direct or indirect band gap) and the size of the band gap of these materials to evaluate their potential as semiconductor materials. 3. **Mechanical Properties**: Predict the elastic modulus and tensile strength of these materials to understand their behavior under mechanical stress. 4. **Heat Transport Properties**: Predict the lattice thermal conductivity of these materials by solving the Boltzmann transport equation and evaluate their potential for thermal management applications. 5. **Piezoelectric Properties**: Calculate the piezoelectric coefficients of these materials and explore their potential for energy harvesting and conversion applications. Especially for the CrC₂N₄ monolayer, this study found that it has excellent thermal conductivity, elastic modulus, carrier mobility and piezoelectric coefficient, making it a very promising candidate material in nanoelectronics, thermal management and energy storage / conversion systems. ### Main Problem Summary - **Stability**: Confirm the thermodynamic and kinetic stability of the MC₂N₄ monolayer. - **Electronic Properties**: Reveal the semiconductor properties and band - gap characteristics of materials such as CrC₂N₄. - **Mechanical Properties**: Predict and analyze the high elastic modulus and tensile strength of these materials. - **Thermal Conductivity**: Estimate the high lattice thermal conductivity of the CrC₂N₄ monolayer at room temperature. - **Piezoelectric Effect**: Evaluate the piezoelectric coefficients of materials such as CrC₂N₄ and WC₂N₄. These research results provide an important theoretical basis for the development of new two - dimensional semiconductor materials and lay the foundation for their applications in nanoelectronics and the energy field.

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