2D Materials: C<sub>3</sub> N-A 2D Crystalline, Hole-Free, Tunable-Narrow-Bandgap Semiconductor with Ferromagnetic Properties (Adv. Mater. 16/2017)

Siwei Yang,Wei Li,Caichao Ye,Gang Wang,He Tian,Chong Zhu,Peng He,Guqiao Ding,Xiaoming Xie,Yang Liu,Yeshayahu Lifshitz,Shuit-Tong Lee,Zhenhui Kang,Mianheng Jiang
DOI: https://doi.org/10.1002/adma.201770110
IF: 29.4
2017-01-01
Advanced Materials
Abstract:A new 2D crystalline tunable-narrow-bandgap (0.39 eV) semiconductor, C3N, is developed for the first time, as reported by Guqiao Ding, Xiaoming Xie, Shuit-Tong Lee, Zhenhui Kang, and co-workers in article number 1605625. The bandgap tuning (2.74–1.57 eV) of C3N quantum dots is implemented by varying their size. Back-gated field-effect transistors made of single-layer C3N show an average ION/IOFF current ratio of 5.5 × 1010. Strikingly, hydrogenated C3N (C3NH0.125) shows spontaneous magnetism.
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