Abstract:Two-dimensional (2D) carbon nitrides compounds have attracted wide attention in recent years due to their diverse structures and excellent electronic, thermal, and optical properties. Here, by using first-principles approach, we investigate in details the stability, many-body effect, electronic/thermal transport properties, and thermoelectric performance of monolayer ${\mathrm{C}}_{7}{\mathrm{N}}_{6}$, as a new kind of 2D carbon nitride compounds composed of $s{p}^{2}\text{\ensuremath{-}}\mathrm{hybridized}$ carbon atoms forming hexagonal lattice. Our results show that ${\mathrm{C}}_{7}{\mathrm{N}}_{6}$ monolayer is a direct band-gap semiconductor with a band-gap value of 3.56 eV under the accurate ${G}_{0}{W}_{0}$ method. Ab initio molecular dynamics simulations demonstrate that ${\mathrm{C}}_{7}{\mathrm{N}}_{6}$ maintains stable up to $1500\phantom{\rule{0.28em}{0ex}}\mathrm{K}$. Two exciton absorption peaks can be observed within the band gap with the respective large binding energies of $0.84$ and $0.09\phantom{\rule{0.28em}{0ex}}\mathrm{eV}$, which means both excitons can exist at room temperature. Monolayer ${\mathrm{C}}_{7}{\mathrm{N}}_{6}$ possesses high carrier mobility with the order of ${10}^{2}--{10}^{3}\phantom{\rule{0.28em}{0ex}}{\mathrm{cm}}^{2}\phantom{\rule{0.16em}{0ex}}{\mathrm{V}}^{\ensuremath{-}1}\phantom{\rule{0.16em}{0ex}}{\mathrm{s}}^{\ensuremath{-}1}$. Moreover, we find that the lattice thermal conductivity for ${\mathrm{C}}_{7}{\mathrm{N}}_{6}$ is as high as $134.55\phantom{\rule{0.28em}{0ex}}\mathrm{W}/\mathrm{mK}$ at room temperature, thus the thermoelectric figure of merit for ${\mathrm{C}}_{7}{\mathrm{N}}_{6}$ is relatively low. Our work suggests that ${\mathrm{C}}_{7}{\mathrm{N}}_{6}$ is a promising candidate for nanoscale (opto-)electronic and heat transport devices.

Giant Narrow-Band Optical Absorption and Distinctive Excitonic Structures of Monolayer C 3 N and C 3 B

Atomic Layers of Hybridized Boron Nitride and Graphene Domains

C3N—A 2D Crystalline, Hole‐Free, Tunable‐Narrow‐Bandgap Semiconductor with Ferromagnetic Properties

Quasiparticle Band Structures And Optical Properties Of Monolayer Zrnx (X=Cl, Br, I) Under Exciton Effect

2D Materials: C<sub>3</sub> N-A 2D Crystalline, Hole-Free, Tunable-Narrow-Bandgap Semiconductor with Ferromagnetic Properties (Adv. Mater. 16/2017)

A Many-Body GW+BSE Investigation of Electronic and Optical Properties of C2N

C 3 N based heterobilayers: a potential platform to explore optoelectronic and thermoelectric properties

Bandgap engineering of two-dimensional C3N bilayers

Stacking up Electron-Rich and Electron-Deficient Monolayers to Achieve Extraordinary Mid- to Far-Infrared Excitonic Absorption: Interlayer Excitons in the Bilayer

Remarkable band gap renormalization via dimensionality of the layered material C3B

First-principles Study of Two Dimensional C3N and Its Derivatives.

Prediction of two-dimensional C3N2 semiconductors with outstanding stability, moderate band gaps, and high carrier mobility

Multilayer C2N: Effect of Stacking Order and Number of Layers on Bandgap and Its Controlled Electronic Properties by External Electric Field

Two-Dimensional C4N Global Minima: Unique Structural Topologies and Nanoelectronic Properties

Monolayer C7N6 : Room-temperature Excitons with Large Binding Energies and High Thermal Conductivities

Bandgap Tuning of C3N Monolayer: A First-Principles Study

A New Dirac Cone Material: A Graphene- Like Be3c2 Monolayer

Rectangular carbon nitrides C4N monolayers with a zigzag buckled structure: Quasi-one-dimensional Dirac nodal lines and topological flat edge states

Quasiparticle Electronic Structure of Honeycomb C3N: from Monolayer to Bulk

Engineering the electronic bandgaps and band edge positions in carbon-substituted 2D boron nitride: a first-principles investigation

Modulation of the Thermal Conductivity, Interlayer Thermal Resistance, and Interfacial Thermal Conductance of C2N.